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PDF IXFT40N30Q Data sheet ( Hoja de datos )
| Número de pieza | IXFT40N30Q | |
| Descripción | HiPerFET Power MOSFETs Q-Class | |
| Fabricantes | ETC | |
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HiPerFETTM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg
IXFH 40N30Q
IXFT 40N30Q
VDSS = 300 V
ID25 = 40 A
=RDS(on) 80 mW
trr £ 250 ns
Preliminary data sheet
Symbol
VDSS
V
DGR
V
GS
VGSM
I
D25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
T
JM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MW
Continuous
Transient
T
C
= 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247
TO-268
Maximum Ratings
300 V
300 V
±20 V
±30 V
40 A
160 A
40 A
30 mJ
1.0 J
5 V/ns
300
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
6g
4g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 mA
VGS(th)
VDS = VGS, ID = 4 mA
IGSS VGS = ±20 VDC, VDS = 0
I
DSS
V =V
DS DSS
VGS = 0 V
T=
J
25°C
TJ = 125°C
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
Characteristic Values
Min. Typ. Max.
300 V
2.0 4 V
±100 nA
25 mA
1 mA
80 mW
TO-268 (IXFT) Case Style
G
S
TO-247 AD (IXFH)
(TAB)
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
• IXYS advanced low Qg process
• International standard packages
• Low gate charge and capacitance
- easier to drive
- faster switching
• Low RDS (on)
• Unclamped Inductive Switching (UIS)
rated
• Molding epoxies meet UL 94V-0
flammability classification
Advantages
• Easy to mount
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98504A (6/99)
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