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PDF IXFT26N50Q Data sheet ( Hoja de datos )
| Número de pieza | IXFT26N50Q | |
| Descripción | HiPerFET Power MOSFETs | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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HiPerFETTM
Power MOSFETs
Q-Class
IXFH/IXFT 24N50Q
IXFH/IXFT 26N50Q
N-Channel Enhancement Mode
Avalanche Rated, Low Qg,High dv/dt
VDSS
ID25
500 V 24 A
500 V 26 A
trr ≤ 250 ns
RDS(on)
0.23 Ω
0.20 Ω
Symbol
Test Conditions
Maximum Ratings TO-247 AD (IXFH)
VDSS
VDGR
V
GS
V
GSM
ID25
IDM
IAR
E
AR
EAS
dv/dt
PD
T
J
T
JM
T
stg
TL
Md
Weight
Symbol
VDSS
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Note 1
TC = 25°C
24N50
26N50
24N50
26N50
24N50
26N50
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-268
500
500
±20
±30
24
26
96
104
24
26
30
1.5
5
300
-55 ... +150
150
-55 ... +150
300
1.13/10
6
4
V
V
V
V
A
A
A
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
Nm/lb.in.
g
g
Test Conditions
VGS = 0 V, ID = 250 µA
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
500 V
(TAB)
TO-268 (D3) (IXFT) Case Style
G
S
G = Gate,
S = Source,
D = Drain,
TAB = Drain
(TAB)
Features
l IXYS advanced low Qg process
l International standard packages
l Low RDS (on)
l Unclamped Inductive Switching (UIS)
rated
l Fast switching
l Molding epoxies meet UL 94 V-0
flammability classification
VGS(th)
VDS = VGS, ID = 4 mA
2.5
4.5 V
Advantages
IGSS
IDSS
RDS(on)
VGS = ±20 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = 0.5 ID25
Note 2
TJ = 25°C
TJ = 125°C
24N50Q
26N50Q
±100 nA
25
1
0.23
0.20
µA
mA
Ω
Ω
l Easy to mount
l Space savings
l High power density
© 2001 IXYS All rights reserved
98512G (5/01)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFT26N50Q.PDF ] | |
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