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PDF IXFT20N80Q Data sheet ( Hoja de datos )
| Número de pieza | IXFT20N80Q | |
| Descripción | HiPerFETTM Power MOSFETs Q-Class | |
| Fabricantes | IXYS Corporation | |
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Advanced Technical Information
HiPerFETTM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated,
Low Q , High dv/dt
g
IXFH20N80Q VDSS = 800 V
IXFK20N80Q ID25 = 20 A
IXFT20N80Q RDS(on) = 0.42 W
trr £ 250 ns
Symbol
VDSS
VDGR
VGS
VGSM
I
D25
IDM
I
AR
EAR
E
AS
dv/dt
PD
T
J
TJM
T
stg
TL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
T
C
= 25°C
TC = 25°C, pulse width limited by TJM
T
C
= 25°C
TC = 25°C
T
C
= 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
T
J
£
150°C,
R
G
=
2
W
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
Maximum Ratings
800 V
800 V
±20 V
±30 V
20 A
80 A
20 A
45 mJ
1.5 J
5 V/ns
360
-55 ... +150
150
-55 ... +150
300
W
°C
°C
°C
°C
Mounting torque
TO-247
TO-264
TO-247
TO-268
TO-264
1.13/10 Nm/lb.in.
0.9/6 Nm/lb.in.
6g
4g
10 g
TO-247 AD (IXFH)
TO-268 (D3) ( IXFT)
G
S
(TAB)
TO-264 AA (IXFK)
G
D
S
D (TAB)
G = Gate
S = Source
TAB = Drain
Symbol
VDSS
VGS(th)
I
GSS
IDSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 250 mA
VDS = VGS, ID = 4 mA
V
GS
=
±20
V,
DC
V
DS
=
0
VDS = VDSS
V =0V
GS
TJ = 25°C
T
J
=
125°C
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
800
2.5
V
4.5 V
±200 nA
25 mA
1 mA
0.42 W
Features
• IXYS advanced low Qg process
• International standard packages
• EpoxymeetUL94V-0, flammability
classification
• Low RDS (on) low Qg
• Avalanche energy and current rated
• Fast intrinsic rectifier
Advantages
• Easy to mount
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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