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PDF IXFT12N100F Data sheet ( Hoja de datos )
| Número de pieza | IXFT12N100F | |
| Descripción | HiPerRF Power MOSFETs | |
| Fabricantes | IXYS Corporation | |
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Advance Technical Information
HiPerRFTM
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic Rg
High dV/dt, Low trr
IXFH 12N100F
IXFT 12N100F
VDSS
I
D25
RDS(on)
= 1000 V
= 12 A
= 1.05 Ω
t
rr
≤
250
ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
P
D
TJ
T
JM
Tstg
T
L
Md
Weight
Symbol
V
DSS
VGS(th)
IGSS
IDSS
RDS(on)
TO-247 AD (IXFH)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque TO-247
TO-247
TO-268
Maximum Ratings
1000
1000
±20
±30
12
48
12
30
1.0
5
V
V
V
V
A
A
A
mJ
J
V/ns
300 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
6g
4g
Test Conditions
V = 0 V, I = 1mA
GS D
VDS = VGS, ID = 4mA
VGS = ±20 V, VDS = 0
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = 0.5 ID25
Note 1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
1000
V
3.0 5.5 V
±100 nA
TJ = 125°C
50 µA
1.5 mA
1.05 Ω
(TAB)
TO-268 (IXFT) Case Style
G
S
G = Gate,
S = Source,
D = Drain,
TAB = Drain
(TAB)
Features
l RF capable MOSFETs
l Double metal process for low gate
resistance
l Ruggedpolysilicongatecellstructure
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
l Fast intrinsic rectifier
Applications
l DC-DC converters
l Switched-mode and resonant-mode
power supplies, >500kHz switching
l DC choppers
l 13.5 MHz industrial applications
l Pulse generation
l Laser drivers
l RF amplifiers
Advantages
l Space savings
l High power density
© 2001 IXYS All rights reserved
98856 (8/01)
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXFT12N100F.PDF ] | |
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