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Número de pieza | IXFR55N50F | |
Descripción | HiPerRF Power MOSFETs F-Class: MegaHertz Switching | |
Fabricantes | IXYS Corporation | |
Logotipo | ||
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Power MOSFETs
F-Class: MegaHertz Switching
IXFR 55N50F
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic Rg
High dV/dt, Low trr
VDSS = 500 V
ID25
RDS(on)
=
=
55 A
90 mΩ
trr ≤ 250 ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EEAARS
dv/dt
PD
TJ
TTJsMtg
TL
VISOL
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TTCC
= 25°C
= 25°C
ITSJ
≤
≤
1ID5M0, °dCi/,dRt ≤G
100
=2
A/µs,
Ω
VDD
≤
VDSS
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS t = 1 min
Maximum Ratings
500 V
500 V
±20 V
±30 V
45 A
220 A
55 A
60 mJ
3.0 J
10 V/ns
400
-40 ... +150
150
-40 ... +150
300
2500
5
W
°C
°C
°C
°C
V~
g
Test Conditions
VGS = 0 V, ID = 1mA
VDS = VGS, ID = 8mA
VGS = ±20 V, VDS = 0
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = IT
Notes 2, 3
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
500 V
3.0 5.5 V
±200 nA
TJ = 25°C
TJ = 125°C
100 µA
3 mA
90 mΩ
ISOPLUS 247TM
E153432
Isolated backside*
G = Gate D = Drain
S = Source TAB = Electrically Isolated
Features
z Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z RF capable Mosfets
z Low gate charge and capacitances
- easier to drive
-faster switching
z Low drain to tab capacitance(<30pF)
z Low RDS (on) HDMOSTM process
z Rugged polysilicon gate cell structure
z Rated for Unclamped Inductive Load
Switching (UIS)
z FastintrinsicRectifier
Applications
z DC-DC converters
z Battery chargers
z Switched-mode and resonant-mode
power supplies
z DC choppers
z AC motor control
Advantages
z Easy assembly
z Space savings
z High power density
© 2004 IXYS All rights reserved
DS98814C(06/04)
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet IXFR55N50F.PDF ] |
Número de pieza | Descripción | Fabricantes |
IXFR55N50 | Power MOSFETs | IXYS Corporation |
IXFR55N50F | HiPerRF Power MOSFETs F-Class: MegaHertz Switching | IXYS Corporation |
IXFR55N50F | HiPerRF Power MOSFETs F-Class: MegaHertz Switching | IXYS Corporation |
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