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PDF IXFR44N60 Data sheet ( Hoja de datos )
| Número de pieza | IXFR44N60 | |
| Descripción | HiPerFETTM Power MOSFETs ISOPLUS247 | |
| Fabricantes | IXYS Corporation | |
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HiPerFETTM Power MOSFETs
ISOPLUS247TM
(Electrically Isolated Back Surface)
IXFR 44N60
Single MOSFET Die
VDSS = 600 V
ID25 = 38 A
RDS(on) = 130 mW
trr £ 250 ns
Symbol
VDSS
V
DGR
VGS
V
GSM
I
D25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
VISOL
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MW
Continuous
Transient
T
C
= 25°C
TC = 25°C, Note 1
TC = 25°C
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS t = 1 min
Maximum Ratings
600 V
600 V
±20 V
±30 V
38 A
60 A
44 A
60 mJ
3J
5 V/ns
400
-55 ... +150
150
-55 ... +150
300
2500
5
W
°C
°C
°C
°C
V~
g
Test Conditions
VGS = 0 V. ID = 250mA
VDS = VGS. ID = 4mA
VGS = ±20 V, VDS = 0
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = IT
Notes 2, 3
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
600 V
2.5
TJ = 25°C
TJ = 125°C
4.5 V
±100 nA
100 mA
2 mA
130 mW
ISOPLUS 247TM
E153432
G = Gate
S = Source
D = Drain
* Patent pending
Features
• Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
• Low drain to tab capacitance(<30pF)
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC & DC motor control
Advantages
• Easy assembly
• Space savings
• High power density
• Low noise to ground
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98728 (06/09/00)
1-2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXFR44N60.PDF ] | |
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