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PDF IXFR120N20 Data sheet ( Hoja de datos )
| Número de pieza | IXFR120N20 | |
| Descripción | HiPerFETTM Power MOSFETs ISOPLUS247 | |
| Fabricantes | IXYS Corporation | |
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Advanced Technical Information
HiPerFETTM Power MOSFETs
ISOPLUS247TM
(Electrically Isolated Back Surface)
Single MOSFET Die
IXFR 120N20
VDSS = 200 V
ID25 = 105 A
RDS(on) = 17 mW
trr £ 250 ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
ID(RMS)
IDM
IAR
EAR
E
AS
dv/dt
PD
TJ
TJM
Tstg
TL
V
ISOL
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C (MOSFET chip capability)
External lead (current limit)
TC = 25°C, Note 1
TC = 25°C
TC = 25°C
T
C
= 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS t = 1 min
Maximum Ratings
200 V
200 V
±20 V
±30 V
105 A
76 A
480 A
120 A
60 mJ
3J
5 V/ns
400
-55 ... +150
150
-55 ... +150
300
2500
5
W
°C
°C
°C
°C
V~
g
Test Conditions
VGS = 0 V, ID = 3mA
VDS = VGS, ID = 8mA
VGS = ±20 V, VDS = 0
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = 60A
Note 2
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
200 V
2.0 4.0 V
±100 nA
TJ = 25°C
TJ = 125°C
100 mA
2 mA
17 mW
ISOPLUS 247TM
E153432
G
D
Isolated back surface*
G = Gate
S = Source
D = Drain
* Patent pending
Features
• Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
• Low drain to tab capacitance(<25pF)
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
Advantages
• Easy assembly
• Space savings
• High power density
• Low noise to ground
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXFR120N20.PDF ] | |
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