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PDF IXFN27N80Q Data sheet ( Hoja de datos )

Número de pieza IXFN27N80Q
Descripción HiPerFET Power MOSFETs Q-Class
Fabricantes IXYS Corporation 
Logotipo IXYS Corporation Logotipo



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No Preview Available ! IXFN27N80Q Hoja de datos, Descripción, Manual

HiPerFETTM
Power MOSFETs
Q-Class
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Preliminary data sheet
Symbol
Test Conditions
V
DSS
VDGR
VGS
V
GSM
ID25
IDM
IAR
EAR
E
AS
dv/dt
PD
TJ
TJM
Tstg
VISOL
Md
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2
TC = 25°C
50/60 Hz, RMS
IISOL 1 mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque
IXFN 27N80Q
VDSS
ID25
RDS(on)
= 800 V
= 27 A
= 320 m
D
G
S
S
Maximum Ratings
800 V
800 V
±20 V
±30 V
27 A
108 A
27 A
60 mJ
2.5 J
5 V/ns
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
D = Drain
S = Source
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
520 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
2500
3000
V~
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30 g
Features
Internationalstandardpackage
Epoxy meet
UL94V-0, flammability classification
miniBLOCwith Aluminium nitride
isolation
IXYS advanced low Qg process
Ruggedpolysilicongatecellstructure
Unclamped Inductive Switching (UIS)
rated
Lowpackageinductance
FastintrinsicRectifier
Symbol
Test Conditions
VDSS
VGH(th)
I
GSS
IDSS
RDS(on)
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 4 mA
VGS = ±20 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = 0.5 ID25
Note 1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ.
max.
800
2.5
TJ = 25°C
TJ = 125°C
V
4.5 V
±100 nA
100 µA
2 mA
0.32
Applications
DC-DC converters
Batterychargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperatureandlightingcontrols
Advantages
Easy to mount
Space savings
High power density
© 2001 IXYS All rights reserved
98813 (04/01)

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