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PDF IXFN150N10 Data sheet ( Hoja de datos )
| Número de pieza | IXFN150N10 | |
| Descripción | HiPerFET Power MOSFETs | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
IXFK100N10
IXFN150N10
V
DSS
I
D25
100 V 100 A
100 V 150 A
trr £ 200 ns
R
DS(on)
12 mW
12 mW
TO-264 AA (IXFK)
Symbol
VDSS
VDGR
VGS
VGSM
ID25
ID120
I
DM
I
AR
EAR
dv/dt
PD
T
J
T
JM
Tstg
TL
VISOL
Md
Weight
Symbol
V
DSS
VGH(th)
IGSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C
TC = 120°C, limited by external leads
T
C
=
25°C,
pulse
width
limited
by
T
JM
T
C
= 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS t = 1 min
I
ISOL
£
1
mA
t=1s
Mounting torque
Terminal connection torque
Maximum Ratings
IXFK
IXFN
100
100
±20
±30
100
76
560
75
30
5
100
100
±20
±30
150
-
560
75
30
5
V
V
V
V
A
A
A
A
mJ
V/ns
500 520 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 - °C
- 2500
- 3000
V~
V~
0.9/6
-
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
10 30 g
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
V = 0 V, I = 1 mA
GS D
VDS = VGS, ID = 8 mA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
V =0V
GS
TJ = 25°C
T
J
=
125°C
VGS = 10 V, ID = 75 A
Pulse test, t £ 300 ms, duty cycle d £ 2 %
100
2
V
4V
±200 nA
400 mA
2 mA
12 mW
G
D
S
miniBLOC, SOT-227 B (IXFN)
E153432
S
DG
(TAB)
G
S
S
S
D
G = Gate
D = Drain
S = Source
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
q International standard packages
q JEDEC TO-264 AA, epoxy meet
UL94 V-0, flammability classification
q miniBLOC with Aluminium nitride
isolation
q Low R HDMOSTM process
DS (on)
q Rugged polysilicon gate cell structure
q Unclamped Inductive Switching (UIS)
rated
q Low package inductance
q Fast intrinsic Rectifier
Applications
q DC-DC converters
q Synchronous rectification
q Battery chargers
q Switched-mode and resonant-mode
power supplies
q DC choppers
q Temperature and lighting controls
q Low voltage relays
Advantages
q Easy to mount
q Space savings
q High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
92803G(8/96)
1-4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFN150N10.PDF ] | |
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