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IXFM13N90 の電気的特性と機能

IXFM13N90のメーカーはETCです、この部品の機能は「HiPerFET Power MOSFETs」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFM13N90
部品説明 HiPerFET Power MOSFETs
メーカ ETC
ロゴ ETC ロゴ 




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IXFM13N90 Datasheet, IXFM13N90 PDF,ピン配置, 機能
HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
IXFH/IXFM10N90
IXFH/IXFM12N90
IXFH13N90
V
DSS
900 V
900 V
900 V
I
D25
10 A
12 A
13 A
trr £ 250 ns
R
DS(on)
1.1 W
0.9 W
0.8 W
Symbol
Test Conditions
Maximum Ratings TO-247 AD (IXFH)
VDSS
VDGR
V
GS
VGSM
ID25
IDM
IAR
EAR
dv/dt
PD
T
J
TJM
T
stg
TL
Md
Weight
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C
TC = 25°C,
pulse width limited by TJM
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
10N90
12N90
13N90
10N90
12N90
13N90
10N90
12N90
13N90
900 V
900 V
±20 V
±30 V
10 A
12 A
13 A
40 A
48 A
13 A
10 A
12 A
13 A
30 mJ
5 V/ns
300 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
TO-204 AA (IXFM)
(TAB)
G
D
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
l International standard packages
l Low R HDMOSTM process
DS (on)
l Rugged polysilicon gate cell structure
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
l Fast intrinsic Rectifier
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
VGS = 0 V, ID = 3 mA
VDS = VGS, ID = 4 mA
VGS = ±20 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 • ID25
10N90
12N90
13N90
Pulse test, t £ 300 ms, duty cycle d £ 2 %
900
2.0
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
V
4.5 V
±100 nA
25 mA
1 mA
1.1 W
0.9 W
0.8 W
Applications
l DC-DC converters
l Synchronous rectification
l Battery chargers
l Switched-mode and resonant-mode
power supplies
l DC choppers
l AC motor control
l Temperature and lighting controls
l Low voltage relays
Advantages
l Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
l Space savings
l High power density
91530G (3/98)
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IXFM13N90 pdf, ピン配列
Fig. 1 Output Characteristics
20
18 TJ = 25°C
16
14
12
10
8
6
4
2
0
05
VGS = 10V
7V
6V
5V
10
VDS - Volts
15
20
Fig. 3 RDS(on) vs. Drain Current
1.5
TJ = 25°C
1.4
1.3
1.2
VGS = 10V
1.1
VGS = 15V
1.0
0.9
0
5 10 15 20 25
ID - Amperes
Fig. 5 Drain Current vs.
Case Temperature
20
18
16
14
12N90
12
10
10N90
8
6
4
2
0
-50 -25 0 25 50 75 100 125 150
TC - Degrees C
IXFH 10N90 IXFH 12N90 IXFH 13N90
IXFM 10N90 IXFM 12N90
Fig. 2 Input Admittance
20
18
16
14
12
10 TJ = 25°C
8
6
4
2
0
0 1 2 3 4 5 6 7 8 9 10
VGS - Volts
Fig. 4 Temperature Dependence
of Drain to Source Resistance
2.50
2.25
2.00
1.75
1.50
1.25
ID = 6A
1.00
0.75
0.50
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
1.2
1.1
VGS(th)
BVDSS
1.0
0.9
0.8
0.7
0.6
0.5
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
© 2000 IXYS All rights reserved
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部品番号部品説明メーカ
IXFM13N90

HiPerFET Power MOSFETs

ETC
ETC


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