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PDF IXFK44N50F Data sheet ( Hoja de datos )
| Número de pieza | IXFK44N50F | |
| Descripción | HiPerRF Power MOSFETs F-Class MegaHertz Switching Single MOSFET Die | |
| Fabricantes | ETC | |
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HiPerRFTM
Power MOSFETs
F-Class: MegaHertz Switching
Single MOSFET Die
IXFX 44N50F
IXFK 44N50F
VDSS = 500 V
ID25 = 44 A
RDS(on) = 120 mΩ
trr ≤ 250 ns
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic Rg
High dV/dt, Low trr
Symbol
Test Conditions
Maximum Ratings
PLUS 247TM (IXFX)
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
P
D
TJ
T
JM
Tstg
T
L
Md
Weight
Symbol
V
DSS
VGS(th)
IGSS
IDSS
RDS(on)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque TO-264
PLUS 247
TO-264
500 V
500 V
±20 V
±30 V
44 A
184 A
44 A
60 mJ
2.5 J
10 V/ns
500 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
0.4/6 Nm/lb.in.
6g
10 g
Test Conditions
V = 0 V, I = 250uA
GS D
VDS = VGS, ID = 4mA
VGS = ±20 V, VDS = 0
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = 0.5 ID25
Note 1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
500 V
3.0 5.0 V
±100 nA
TJ = 25°C
TJ = 125°C
100 µA
2 mA
120 mΩ
G
D
TO-264 AA (IXFK)
(TAB)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
l RF capable MOSFETs
l Double metal process for low gate
resistance
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
l Fast intrinsic rectifier
Applications
l DC-DC converters
l Switched-mode and resonant-mode
power supplies, >500kHz switching
l DC choppers
l 13.5 MHz industrial applications
l Pulse generation
l Laser drivers
l RF amplifiers
Advantages
l PLUS 247TM package for clip or spring
mounting
l Space savings
l High power density
© 2002 IXYS All rights reserved
98731A (01/02)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXFK44N50F.PDF ] | |
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