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PDF IXFH90N20Q Data sheet ( Hoja de datos )
| Número de pieza | IXFH90N20Q | |
| Descripción | HiPerFETTM Power MOSFETs Q-CLASS | |
| Fabricantes | IXYS Corporation | |
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Advanced Technical Information
HiPerFETTM
Power MOSFETs
Q-CLASS
Single MOSFET Die
IXFX 90N20Q
IXFK 90N20Q
V
DSS
ID25
RDS(on)
=
=
=
200 V
90 A
22 mΩ
trr ≤ 200 µs
N-Channel Enhancement Mode
Avalanche Rated, Low Qg,
High dV/dt, Low trr
PLUS 247TM (IXFX)
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
P
D
TJ
T
JM
Tstg
T
L
Md
Weight
Symbol
V
DSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque TO-264
PLUS 247
TO-264
Maximum Ratings
300 V
300 V
±20 V
±30 V
73 A
292 A
73 A
60 mJ
2.5 J
5 V/ns
500 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
0.4/6 Nm/lb.in.
6g
10 g
Test Conditions
V = 0 V, I = 4mA
GS D
VDS = VGS, ID = 4mA
VGS = ±20 V, VDS = 0
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = 0.5 ID25
Note 1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
300 V
2.0 4.0 V
±100 nA
TJ = 125°C
100 µA
2 mA
22 mΩ
G
D
TO-264 AA (IXFK)
(TAB)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
l IXYS advanced low Qg process
l Low gate charge and capacitances
- easier to drive
- faster switching
l International standard packages
l Low R
DS (on)
l Rated for unclamped Inductive load
switching (UIS) rated
l Molding epoxies meet UL 94 V-0
flammability classification
Applications
l DC-DC converters
l Battery chargers
l Switched-mode and resonant-mode
power supplies
l DC choppers
l AC motor control
l Temperature and lighting controls
Advantages
l PLUS 247TM package for clip or spring
mounting
l Space savings
l High power density
© 2000 IXYS All rights reserved
98676A (03/24/00)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXFH90N20Q.PDF ] | |
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