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PDF IXFH80N085 Data sheet ( Hoja de datos )
| Número de pieza | IXFH80N085 | |
| Descripción | HiPerFETTM Power MOSFETs | |
| Fabricantes | IXYS Corporation | |
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HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
Preliminary data sheet
IXFH 80N085
IXFT 80N085
VDSS = 85 V
ID25 = 80 A
RDS(on) = 9 mW
trr £ 200 ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IL(RMS)
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Symbol
VDSS
VGS(th)
I
GSS
IDSS
R
DS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C
Lead current limit
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
T
J
£
150°C,
R
G
=
2
W
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-268
Maximum Ratings
85 V
85 V
±20 V
±30 V
80 A
75 A
320 A
80 A
50 mJ
2.5 J
5 V/ns
300
-55 to +150
150
-55 to +150
300
1.13/10
6
4
W
°C
°C
°C
°C
Nm/lb.in.
g
g
TO-247 AD (IXFH)
(TAB)
TO-268 (IXFT) Case Style
G
S
(TAB)
G = Gate D = Drain
S = Source TAB = Drain
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 4 mA
85
2.0
V
GS
=
±20
V,
DC
V
DS
=
0
VDS = VDSS
V =0V
GS
TJ = 25°C
T
J
= 125°C
V = 10 V, I = 0.5 I
GS D D25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
V
4.0 V
±100 nA
50 mA
1 mA
9 mW
Features
• International standard packages
• Low RDS (on)
• Rated for unclamped Inductive load
switching (UIS)
• Molding epoxies meet UL 94V-0
flammability classification
Advantages
• Easy to mount
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98709 (03/24/00)
1-2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXFH80N085.PDF ] | |
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