DataSheet.jp

IXFH75N10 の電気的特性と機能

IXFH75N10のメーカーはIXYS Corporationです、この部品の機能は「HiPerFET Power MOSFETs」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFH75N10
部品説明 HiPerFET Power MOSFETs
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




このページの下部にプレビューとIXFH75N10ダウンロード(pdfファイル)リンクがあります。

Total 4 pages

No Preview Available !

IXFH75N10 Datasheet, IXFH75N10 PDF,ピン配置, 機能
HiPerFETTM
Power MOSFETs
IXFH/IXFM 67 N10
IXFH/IXFM 75 N10
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
V
DSS
100 V
100 V
I
D25
67 A
75 A
R
DS(on)
25 mW
20 mW
trr £ 200 ns
Symbol
VDSS
VDGR
V
GS
VGSM
ID25
I
DM
IAR
EAR
dv/dt
PD
T
J
TJM
Tstg
T
L
Md
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C
T
C
=
25°C,
pulse
width
limited
by
T
JM
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
67N10
75N10
67N10
75N10
67N10
75N10
100 V
100 V
±20 V
±30 V
67 A
75 A
268 A
300 A
67 A
75 A
30 mJ
5 V/ns
300 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 250 mA
VDS = VGS, ID = 4 mA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
V =0V
GS
TJ = 25°C
T
J
=
125°C
VGS = 10 V, ID = 0.5 ID25
67N10
75N10
Pulse test, t £ 300 ms, duty cycle d £ 2 %
100
2.0
V
4V
±100 nA
250 mA
1 mA
0.025 W
0.020 W
TO-247 AD (IXFH)
TO-204 AE (IXFM)
(TAB)
G = Gate,
S = Source,
G
D
D = Drain,
TAB = Drain
Features
q International standard packages
q Low R HDMOSTM process
DS (on)
q Rugged polysilicon gate cell structure
q Unclamped Inductive Switching (UIS)
rated
q Low package inductance
- easy to drive and to protect
q Fast intrinsic Rectifier
Applications
q DC-DC converters
q Synchronous rectification
q Battery chargers
q Switched-mode and resonant-mode
power supplies
q DC choppers
q AC motor control
q Temperature and lighting controls
q Low voltage relays
Advantages
q Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
q Space savings
q High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
91521F (10/95)
1-4

1 Page





IXFH75N10 pdf, ピン配列
Fig. 1 Output Characteristics
200
TJ = 25°C
150
100
VGS = 10V
9V
8V
7V
50
6V
5V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VDS - Volts
Fig. 3 RDS(on) vs. Drain Current
1.4
TJ = 25°C
1.3
1.2
VGS = 10V
1.1
1.0
VGS = 15V
0.9
0.8
0
20 40 60 80 100 120 140 160
ID - Amperes
Fig. 5 Drain Current vs.
Case Temperature
80 75N10
67N10
60
40
20
0
-50 -25 0 25 50 75 100 125 150
TC - Degrees C
IXFH 67N10 IXFH 75N10
IXFM 67N10 IXFM 75N10
Fig. 2 Input Admittance
150
125
100
75
50
25
TJ = 125°C
TJ = 25°C
0
0 1 2 3 4 5 6 7 8 9 10
VGS - Volts
Fig. 4 Temperature Dependence
of Drain to Source Resistance
2.50
2.25
2.00
1.75
1.50
1.25
ID = 37.5A
1.00
0.75
0.50
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
1.2
1.1 VGS(th)
BVDSS
1.0
0.9
0.8
0.7
0.6
0.5
-50 -25 0 25 50 75 100 125 150
TJ - Degrees C
© 2000 IXYS All rights reserved
3-4


3Pages





ページ 合計 : 4 ページ
 
PDF
ダウンロード
[ IXFH75N10 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
IXFH75N10

HiPerFET Power MOSFETs

IXYS Corporation
IXYS Corporation
IXFH75N10Q

POWER MOSFETS

IXYS
IXYS


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap