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PDF IXFH66N20Q Data sheet ( Hoja de datos )
| Número de pieza | IXFH66N20Q | |
| Descripción | HiPerFET Power MOSFETs Q-Class | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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HiPerFETTM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated High dv/dt, Low Qg
Preliminary data sheet
IXFH 66N20Q
IXFT 66N20Q
VDSS =
I=
D25
=RDS(on)
200 V
66 A
40 mΩ
trr ≤ 200 ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
I
DM
IAR
EAR
EAS
dv/dt
P
D
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
T
C
=
25°C,
pulse
width
limited
by
T
JM
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
T
J
≤
150°C,
R
G
=
2
Ω
T
C
= 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247
TO-268
Maximum Ratings
200 V
200 V
±30 V
±40 V
66 A
264 A
66 A
40 mJ
1.5 J
20 V/ns
400
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
6g
4g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
200 V
VGS(th)
VDS = VGS, ID = 4 mA
2.0 4.0 V
I
GSS
V
GS
=
±30
V,
DC
V
DS
=
0
±100 nA
IDSS
RDS(on)
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
25 µA
1 mA
40 m Ω
TO-268 (D3) (IXFT) Case Style
G
S
TO-247 AD
(TAB)
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z IXYS advanced low Qg process
z International standard packages
z Low gate charge and capacitance
- easier to drive
- faster switching
z Low RDS (on)
z Unclamped Inductive Switching (UIS)
rated
z Molding epoxies meet UL 94 V-0
flammability classification
Advantages
z Easy to mount
z Space savings
z High power density
© 2003 IXYS All rights reserved
DS99039(04/03)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFH66N20Q.PDF ] | |
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