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IXFH15N80 の電気的特性と機能

IXFH15N80のメーカーはIXYS Corporationです、この部品の機能は「HiPerFET Power MOSFETs」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFH15N80
部品説明 HiPerFET Power MOSFETs
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXFH15N80 Datasheet, IXFH15N80 PDF,ピン配置, 機能
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t , HDMOSTM Family
rr
IXFH14N80
IXFH15N80
V
DSS
I
D25
800 V 14 A
800 V 15 A
t
rr
£ 250 ns
R
DS(on)
0.70 W
0.60 W
Preliminary data
Symbol
VDSS
VDGR
VGS
VGSM
ID25
I
DM
I
AR
EAR
dv/dt
P
D
TJ
TJM
T
stg
TL
M
d
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C
T
C
=
25°C,
pulse
width
limited
by
T
JM
T
C
= 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
T
C
= 25°C
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Maximum Ratings
800 V
800 V
±20 V
±30 V
14N80
15N80
14N80
15N80
14
15
56
60
A
A
A
A
14N80
15N80
14
15
A
A
30 mJ
5 V/ns
300 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
6g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 3 mA
V temperature coefficient
DSS
VGS(th)
VDS = VGS, ID = 4 mA
VGS(th) temperature coefficient
IGSS VGS = ±20 VDC, VDS = 0
IDSS VDS = 0.8 VDSS
V =0V
GS
TJ = 25°C
T
J
=
125°C
R
DS(on)
V = 10 V, I = 0.5 I
GS D D25
14N80
15N80
Pulse test, t £ 300 ms, duty cycle d £ 2 %
Characteristic Values
Min. Typ. Max.
800
0.096
V
%/K
2.0
-0.214
4.5 V
%/K
±100 nA
250 mA
1 mA
0.70 W
0.60 W
TO-247 AD
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
International standard packages
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Low voltage relays
Advantages
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
96523B (3/98)
1-4

1 Page





IXFH15N80 pdf, ピン配列
Figure 1. Output Characteristics at 25OC
20
TJ = 25OC
16
12
VGS = 9V
8V
7V
6V
5V
8
4
4V
0
0 2 4 6 8 10
VDS - Volts
Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
VGS = 10V
TJ = 125OC
TJ = 25OC
5 10 15
ID - Amperes
20
25
Figure 5. Drain Current vs. Case Temperature
20
16
IXFH15N80
12
IXFH14N80
8
4
0
-50 -25
0 25 50 75 100 125 150
TC - Degrees C
© 2000 IXYS All rights reserved
IXFH 14N80
IXFH 15N80
Figure 2. Output Characteristics at 125OC
20
TJ = 125OC
16
12
VGS = 9V
8V
7V
6V
5V
8
4V
4
0
0 4 8 12 16 20
VDS - Volts
Figure 4. RDS(on) normalized to 0.5 ID25 value vs. TJ
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
25
VGS = 10V
ID = 15A
ID = 7.5A
50 75 100 125
TJ - Degrees C
150
Figure 6. Admittance Curves
16
14
12
10
8
6
4
2
0
2
TJ = 125oC
TJ = 25oC
3456
VGS - Volts
7
3-4


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共有リンク

Link :


部品番号部品説明メーカ
IXFH15N80

HiPerFET Power MOSFETs

IXYS Corporation
IXYS Corporation
IXFH15N80Q

HiPerFET Power MOSFETs Q-Class

IXYS Corporation
IXYS Corporation


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