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PDF IXDN414CI Data sheet ( Hoja de datos )

Número de pieza IXDN414CI
Descripción 14 Ampere Low-Side Ultrafast MOSFET Drivers
Fabricantes IXYS Corporation 
Logotipo IXYS Corporation Logotipo



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No Preview Available ! IXDN414CI Hoja de datos, Descripción, Manual

IXDN414PI / N414CI / N414CM / N414YI / N414YM
IXDI414PI / I414CI / I414CM / I414YI / I414YM
14 Ampere Low-Side Ultrafast MOSFET Drivers
Features
• Built using the advantages and compatibility
of CMOS and IXYS HDMOSTM processes
• Latch-Up Protected Over Entire
Operating Range
• High Peak Output Current: 14A Peak
• Wide Operating Range: 4.5V to 25V
• High Capacitive Load
Drive Capability: 15nF in <30ns
• Matched Rise And Fall Times
• Low Propagation Delay Time
• Low Output Impedance
• Low Supply Current
Applications
• Driving MOSFETs and IGBTs
• Motor Controls
• Line Drivers
• Pulse Generators
• Local Power ON/OFF Switch
• Switch Mode Power Supplies (SMPS)
• DC to DC Converters
• Pulse Transformer Driver
• Class D Switching Amplifiers
General Description
The IXDI414/IXDN414 is a high speed high current gate driver
specifically designed to drive the largest MOSFETs and IGBTs
to their minimum switching time and maximum practical
frequency limits. The IXDI/N414 can source and sink 14A of
peak current while producing voltage rise and fall times of less
than 30ns to drive the latest IXYS MOSFETs & IGBTs. The
input of the driver is compatible with TTL or CMOS and is fully
immune to latch up over the entire operating range. Designed
with small internal delays, a patent-pending circuit virtually
eliminates transistor cross conduction and current shoot-
through. Improved speed and drive capabilities are further
enhanced by very low, matched rise and fall times.
The IXDN414 is configured as a non-inverting gate driver and
the IXDI414 is an inverting gate driver.
The IXDN414/IXDI414 family are available in standard 8 pin
P-DIP (PI), 5-pin TO-220 (CI, CM) and TO-263 (YI, YM)
surface-mount packages.
Figure 1 - IXDN414 14A Non-Inverting Gate Driver Functional Block Diagram
Vcc
IN
GND
ANTI-CROSS
CONDUCTION
CIRCUIT *
Vcc
P
OUT
N
GND
* Patent Pending
Copyright © IXYS CORPORATION 2001
First Release

1 page




IXDN414CI pdf
Fig. 4
40
IXDN414PI / N414CI / N414CM / N414YI / N414YM
IXDI414PI / I414CI / I414CM / I414YI / I414YM
Typical Performance Characteristics
RiseTimevs. Supply Voltage
Fig. 5
40
Fall Timevs. SupplyVoltage
30
CL=15,000 pF
20
7,500 pF
10 3,600pF
30
20 CL=15,000pF
7,500 pF
10 3,600pF
0
8
Fig. 6
40
10 12 14 16
Supply Voltage(V)
Rise AndFall Times vs. CaseTemperature
CL =15 nF, Vcc =18V
18
35
30 tR
25
tF
20
15
10
5
0
-40 -20 0 20 40 60 80 100 120
Temperature (°C)
Fig. 8
Fall Time vs. Load Capacitance
40
14V 12V 8V
30 10V
16V18V
20
10
0
0k 5k 10k 15k 20k
Load Capacitance (pF)
5
0
8
Fig. 7
50
40
30
20
10 12 14 16
Supply Voltage (V)
Rise Timevs. LoadCapacitance
18
8V
10V
12V
18V
14V 16V
10
0
0k
Fig. 9
3.2
5k 10k 15k
Load Capacitance (pF)
Max / Min Input vs. Case Temperature
VCC=18V CL=15nF
20k
3.0
2.8 MinimumInput High
2.6
2.4
2.2
MaximumInput Low
2.0
1.8
1.6
-60 -40 -20 0 20 40 60 80 100
Temperature (oC)

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