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PDF IXDH35N60BD1 Data sheet ( Hoja de datos )
| Número de pieza | IXDH35N60BD1 | |
| Descripción | IGBT with optional Diode | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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IGBT
with optional Diode
High Speed,
Low Saturation Voltage
IXDP 35N60 B VCES = 600 V
IXDH 35N60 B IC25
= 60 A
IXDH 35N60 BD1 V =CE(sat) typ 2.1 V
C
G
C TO-247 AD IXDH ...
G
EE
IXDH 35N60 B IXDH 35N60 BD1
IXDP 35N60 B
Symbol
Conditions
Maximum Ratings
VCES
VCGR
VGES
VGEM
IC25
IC90
ICM
RBSOA
tSC
(SCSOA)
PC
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 20 kW
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 90°C, tp =1 ms
VGE= ±15 V, TJ = 125°C, RG = 10 W
Clamped inductive load, L = 30 µH
VGE= ±15 V, VCE = 600 V, TJ = 125°C
RG = 10 W, non repetitive
TC = 25°C
IGBT
Diode
600
600
±20
±30
60
35
70
ICM = 110
VCEK < VCES
10
250
80
V
V
V
V
A
A
A
A
µs
W
W
TJ
Tstg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
-55 ... +150
-55 ... +150
300
°C
°C
°C
Md Mounting torque TO-220
TO-247
0.4 - 0.6
0.8 - 1.2
Nm
Nm
Weight
6g
G
C
E
C (TAB)
TO-220 AB
IXDP ...
G
C
E
G = Gate,
C = Collector ,
C (TAB)
E = Emitter
TAB = Collector
Features
q NPT IGBT technology
q low switching losses
q low tail current
q no latch up
q short circuit capability
q positive temperature coefficient for
easy paralleling
q MOS input, voltage controlled
q optional ultra fast diode
q International standard package
Advantages
q Space savings
q High power density
Symbol
V(BR)CES
VGE(th)
I
CES
IGES
VCE(sat)
Conditions
VGE = 0 V
IC = 0.7 mA, VCE = VGE
V =V
CE CES
VCE = 0 V, VGE = ± 20 V
IC = 35 A, VGE = 15 V
Characteristic Values
(T = 25°C, unless otherwise specified)
J
min. typ. max.
600 V
3 5V
T = 25°C
J
TJ = 125°C
0.1 mA
1 mA
± 500 nA
2.2 2.7 V
Typical Applications
q AC motor speed control
q DC servo and robot drives
q DC choppers
q Uninteruptible power supplies (UPS)
q Switch-mode and resonant-mode
power supplies
© 2000 IXYS All rights reserved
1-4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXDH35N60BD1.PDF ] | |
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