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IXDH20N120 の電気的特性と機能

IXDH20N120のメーカーはIXYS Corporationです、この部品の機能は「High Voltage IGBT with optional Diode」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXDH20N120
部品説明 High Voltage IGBT with optional Diode
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 




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IXDH20N120 Datasheet, IXDH20N120 PDF,ピン配置, 機能
High Voltage IGBT
with optional Diode
Short Circuit SOA Capability
Square RBSOA
IXDH 20N120
VCES = 1200 V
IXDH 20N120 D1 IC25
= 38 A
V =CE(sat) typ 2.4 V
C C TO-247 AD
GG
EE
IXDH 20N120 IXDH 20N120 D1
Symbol
Conditions
VCES
VCGR
VGES
VGEM
IC25
IC90
ICM
RBSOA
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 20 kW
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 90°C, tp = 1 ms
VGE = ±15 V, TJ = 125°C, RG = 82 W
Clamped inductive load, L = 30 µH
tSC
(SCSOA)
PC
VGE = ±15 V, VCE = VCES, TJ = 125°C
RG = 82 W, non repetitive
TC = 25°C
IGBT
Diode
TJ
Tstg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Md
Weight
Mounting torque
Maximum Ratings
1200
1200
V
V
±20 V
±30 V
38 A
25 A
50 A
ICM = 35
VCEK < VCES
10
A
µs
200
75
-55 ... +150
-55 ... +150
300
W
W
°C
°C
°C
0.8 - 1.2
6
Nm
g
G
C
E
G = Gate,
C = Collector ,
C (TAB)
E = Emitter
TAB = Collector
Features
q NPT IGBT technology
q low saturation voltage
q low switching losses
q square RBSOA, no latch up
q high short circuit capability
q positive temperature coefficient for
easy paralleling
q MOS input, voltage controlled
q optional ultra fast diode
q International standard package
Advantages
q Space savings
q High power density
Typical Applications
q AC motor speed control
q DC servo and robot drives
q DC choppers
q Uninteruptible power supplies (UPS)
q Switch-mode and resonant-mode
power supplies
Symbol
V(BR)CES
VGE(th)
ICES
IGES
VCE(sat)
Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGE = 0 V
IC = 0.6 mA, VCE = VGE
VCE = VCES
TJ = 25°C
T = 125°C
J
VCE = 0 V, VGE = ± 20 V
IC = 20 A, VGE = 15 V
1200
V
4.5 6.5 V
1 mA
2 mA
± 500 nA
2.4 3 V
© 2000 IXYS All rights reserved
1-4

1 Page





IXDH20N120 pdf, ピン配列
40
TJ = 25°C
3A5
IC 30
25
VGE=17V
15V
13V
11V
20
15
10 9V
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 V
VCE
Fig. 1 Typ. output characteristics
40
VCE = 20V
3A5 TJ = 25°C
30
IC
25
20
15
10
5
0
5 6 7 8 9 10 11 V
VGE
Fig. 3 Typ. transfer characteristics
20
V VCE = 600V
IC = 20A
VGE 15
10
5
0
0 10 20 30 40 50 60 70 80 nC
QG
Fig. 5 Typ. turn on gate charge
© 2000 IXYS All rights reserved
IXDH 20N120
IXDH 20N120 D1
40
TJ = 125°C
3A5
IC 30
25
VGE=17V 15V
13V
11V
20
15
9V
10
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V
VCE
Fig. 2 Typ. output characteristics
45
4A0
35
IF 30
25
20
15
TJ = 125°C
TJ = 25°C
10
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 V
VF
Fig. 4 Typ. forward characteristics of
free wheeling diode (D1 version only)
20
A
IRM 15
trr
400
ns
300 trr
10 200
5
IRM
TJ= 125°C
VR= 600V 100
IF = 20A
IXDH20N120D1
00
0 100 200 300 400 A/ms
-di/dt
Fig. 6 Typ. turn off characteristics of
free wheeling diode (D1 version only)
3-4


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部品番号部品説明メーカ
IXDH20N120

High Voltage IGBT with optional Diode

IXYS Corporation
IXYS Corporation
IXDH20N120

High Voltage IGBT with optional Diode

IXYS Corporation
IXYS Corporation
IXDH20N120D1

High Voltage IGBT with optional Diode

IXYS Corporation
IXYS Corporation
IXDH20N120D1

High Voltage IGBT with optional Diode

IXYS Corporation
IXYS Corporation


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