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IXDH20N120のメーカーはIXYS Corporationです、この部品の機能は「High Voltage IGBT with optional Diode」です。 |
部品番号 | IXDH20N120 |
| |
部品説明 | High Voltage IGBT with optional Diode | ||
メーカ | IXYS Corporation | ||
ロゴ | |||
このページの下部にプレビューとIXDH20N120ダウンロード(pdfファイル)リンクがあります。 Total 4 pages
High Voltage IGBT
with optional Diode
Short Circuit SOA Capability
Square RBSOA
IXDH 20N120
VCES = 1200 V
IXDH 20N120 D1 IC25
= 38 A
V =CE(sat) typ 2.4 V
C C TO-247 AD
GG
EE
IXDH 20N120 IXDH 20N120 D1
Symbol
Conditions
VCES
VCGR
VGES
VGEM
IC25
IC90
ICM
RBSOA
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 20 kW
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 90°C, tp = 1 ms
VGE = ±15 V, TJ = 125°C, RG = 82 W
Clamped inductive load, L = 30 µH
tSC
(SCSOA)
PC
VGE = ±15 V, VCE = VCES, TJ = 125°C
RG = 82 W, non repetitive
TC = 25°C
IGBT
Diode
TJ
Tstg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Md
Weight
Mounting torque
Maximum Ratings
1200
1200
V
V
±20 V
±30 V
38 A
25 A
50 A
ICM = 35
VCEK < VCES
10
A
µs
200
75
-55 ... +150
-55 ... +150
300
W
W
°C
°C
°C
0.8 - 1.2
6
Nm
g
G
C
E
G = Gate,
C = Collector ,
C (TAB)
E = Emitter
TAB = Collector
Features
q NPT IGBT technology
q low saturation voltage
q low switching losses
q square RBSOA, no latch up
q high short circuit capability
q positive temperature coefficient for
easy paralleling
q MOS input, voltage controlled
q optional ultra fast diode
q International standard package
Advantages
q Space savings
q High power density
Typical Applications
q AC motor speed control
q DC servo and robot drives
q DC choppers
q Uninteruptible power supplies (UPS)
q Switch-mode and resonant-mode
power supplies
Symbol
V(BR)CES
VGE(th)
ICES
IGES
VCE(sat)
Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGE = 0 V
IC = 0.6 mA, VCE = VGE
VCE = VCES
TJ = 25°C
T = 125°C
J
VCE = 0 V, VGE = ± 20 V
IC = 20 A, VGE = 15 V
1200
V
4.5 6.5 V
1 mA
2 mA
± 500 nA
2.4 3 V
© 2000 IXYS All rights reserved
1-4
1 Page 40
TJ = 25°C
3A5
IC 30
25
VGE=17V
15V
13V
11V
20
15
10 9V
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 V
VCE
Fig. 1 Typ. output characteristics
40
VCE = 20V
3A5 TJ = 25°C
30
IC
25
20
15
10
5
0
5 6 7 8 9 10 11 V
VGE
Fig. 3 Typ. transfer characteristics
20
V VCE = 600V
IC = 20A
VGE 15
10
5
0
0 10 20 30 40 50 60 70 80 nC
QG
Fig. 5 Typ. turn on gate charge
© 2000 IXYS All rights reserved
IXDH 20N120
IXDH 20N120 D1
40
TJ = 125°C
3A5
IC 30
25
VGE=17V 15V
13V
11V
20
15
9V
10
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V
VCE
Fig. 2 Typ. output characteristics
45
4A0
35
IF 30
25
20
15
TJ = 125°C
TJ = 25°C
10
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 V
VF
Fig. 4 Typ. forward characteristics of
free wheeling diode (D1 version only)
20
A
IRM 15
trr
400
ns
300 trr
10 200
5
IRM
TJ= 125°C
VR= 600V 100
IF = 20A
IXDH20N120D1
00
0 100 200 300 400 A/ms
-di/dt
Fig. 6 Typ. turn off characteristics of
free wheeling diode (D1 version only)
3-4
3Pages | |||
ページ | 合計 : 4 ページ | ||
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部品番号 | 部品説明 | メーカ |
IXDH20N120 | High Voltage IGBT with optional Diode | IXYS Corporation |
IXDH20N120 | High Voltage IGBT with optional Diode | IXYS Corporation |
IXDH20N120D1 | High Voltage IGBT with optional Diode | IXYS Corporation |
IXDH20N120D1 | High Voltage IGBT with optional Diode | IXYS Corporation |