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IXBT10N170 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXBT10N170
部品説明 High Voltage/ High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 



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IXBT10N170 Datasheet, IXBT10N170 PDF,ピン配置, 機能
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High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
Preliminary Data Sheet
IXBH 10N170
IXBT 10N170
IVCC25ES
= 1700 V
= 20 A
VCE(sat) = 3.8 V
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
1700
1700
VGES
VGEM
Continuous
Transient
±20
±30
IC25 TC = 25°C
IC90 TC = 90°C
ICM TC = 25°C, 1 ms
20
10
40
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 33
Clamped inductive load
ICM =
20
VCES = 1350
PC TC = 25°C
140
TJ -55 ... +150
TJM 150
Tstg -55 ... +150
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
300
260
V
V
V
V
A
A
A
A
V
W
°C
°C
°C
°C
°C
Md
Weight
Mounting torque (M3) (TO-247)
TO-247 AD
TO-268
1.13/10Nm/lb.in.
6g
4g
Symbol
BVCES
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
IC = 250 µA, VGE = 0 V
Temperature Coefficent
IC = 250 µA, VCE = VGE
Temperature Coefficent
VCE = 0.8 VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TJ = 25°C
TJ = 125°C
TJ = 125°C
1700
3.0
0.10
- 0.24
V
%/K
5.0 V
%/K
10 µA
100 µA
±100 nA
3.4 3.8 V
4.1 V
TO-268 (IXBT)
G
E
TO-247 AD (IXBH)
(TAB)
G
CE
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
z High Blocking Voltage
z JEDEC TO-268 surface and
JEDEC TO-247 AD
z Low conduction losses
z High current handling capability
z MOS Gate turn-on
- drive simplicity
z Molding epoxies meet UL 94 V-0
flammability classification
Applications
z AC motor speed control
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
z Capacitor discharge circuits
Advantages
z High power density
z Suitable for surface mounting
z Easy to mount with 1 screw,
(isolated mounting screw hole)
© 2003 IXYS All rights reserved
DS99048(05/03)

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IXBT10N170

High Voltage/ High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor

IXYS Corporation
IXYS Corporation

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