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IXBH9N140G PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXBH9N140G
部品説明 High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
メーカ IXYS Corporation
ロゴ IXYS Corporation ロゴ 

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IXBH9N140G Datasheet, IXBH9N140G PDF,ピン配置, 機能
High Voltage BIMOSFETTM
Monolithic Bipolar
MOS Transistor
N-Channel, Enhancement Mode
MOSFET compatible
Preliminary Data
IXBH 9N140G
IXBH 9N160G
VCES = 1400/1600 V
IC25 = 9 A
VCE(sat) = 4.9 V typ.
tfi = 70 ns
C TO-247 AD
GG
C
E
C (TAB)
E
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
Symbol
VCES
VCGR
VGES
VGEM
IC25
I
C90
ICM
SSOA
(RBSOA)
PC
T
J
TJM
T
stg
TL
Md
Weight
Symbol
BVCES
VGE(th)
ICES
IGES
V
CE(sat)
Conditions
Maximum Ratings
9N140G 9N160G
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M
Continuous
Transient
1400
1400
1600
1600
±20
±30
V
V
V
V
TC = 25°C,
T
C
= 90°C
TC = 25°C, 1 ms
VGE= 10 V, TVJ = 125°C, RG = 27 VCE = 0.8•VCES
Clamped inductive load, L = 100 µH
9
5
10
ICM = 12
A
A
A
A
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
100
-55 ... +150
150
-55 ... +150
300
W
°C
°C
°C
°C
Mounting torque
1.15/10 Nm/lb.in.
6g
Conditions
IC = 0.25 mA, VGE = 0 V
IC = 0.5 mA, VCE = VGE
VCE = 0.8 • VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
I = I , V = 15 V
C C90 GE
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
9N140G
9N160G
1400
1600
3.5
V
V
5.5 V
TJ = 25°C
TJ = 125°C
100 µA
0.1 mA
± 500 nA
TJ = 125°C
4.9 7 V
5.6 V
Features
• High Voltage BIMOSFETTM
- replaces high voltage Darlingtons
and series connected MOSFETs
- lower effective R
DS(on)
• MOS Gate turn-on
- drive simplicity
- MOSFET compatible for 10V
turn on gate voltage
• Monolithic construction
- high blocking voltage capability
- very fast turn-off characteristics
• International standard package
JEDEC TO-247 AD
• Reverse conducting capability
Applications
• Flyback converters
• DC choppers
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
• CRT deflection
• Lamp ballasts
Advantages
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Space savings
• High power density
C4
© 2000 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
1 -4
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670

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IXBH9N140G

High Voltage BIMOSFET Monolithic Bipolar MOS Transistor

IXYS Corporation
IXYS Corporation

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