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ISL9V5036P3 の電気的特性と機能

ISL9V5036P3のメーカーはFairchild Semiconductorです、この部品の機能は「EcoSPARKTM 500mJ/ 360V/ N-Channel Ignition IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 ISL9V5036P3
部品説明 EcoSPARKTM 500mJ/ 360V/ N-Channel Ignition IGBT
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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ISL9V5036P3 Datasheet, ISL9V5036P3 PDF,ピン配置, 機能
September 2002
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3
EcoSPARKTM 500mJ, 360V, N-Channel Ignition IGBT
General Description
The ISL9V5036S3S, ISL9V5036P3, and ISL9V5036S3 are the next
generation IGBTs that offer outstanding SCIS capability in the D² -
Pak (TO-263) and TO-220 plastic package. These devices are
intended for use in automotive ignition circuits, specifically as coil
drivers. Internal diodes provide voltage clamping without the need
for external components.
EcoSPARK™ devices can be custom made to specific clamp
voltages. Contact your nearest Fairchild sales office for more
information.
Formerly Developmental Type 49443
Applications
• Automotive Ignition Coil Driver Circuits
• Coil- On Plug Applications
Features
• Industry Standard D-Pak package
• SCIS Energy = 500mJ at TJ = 25oC
• Logic Level Gate Drive
Package
JEDEC TO-263AB
D²-Pak
G
E
Symbol
JEDEC TO-220AB
JEDEC TO-262AA
ECG
ECG
GATE
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
BVCER
BVECS
ESCIS25
ESCIS150
IC25
IC110
VGEM
PD
TJ
TSTG
TL
Tpkg
ESD
Parameter
Collector to Emitter Breakdown Voltage (IC = 1 mA)
Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA)
At Starting TJ = 25°C, ISCIS = 38.5A, L = 670 µHy
At Starting TJ = 150°C, ISCIS = 30A, L = 670 µHy
Collector Current Continuous, At TC = 25°C, See Fig 9
Collector Current Continuous, At TC = 110°C, See Fig 9
Gate to Emitter Voltage Continuous
Power Dissipation Total TC = 25°C
Power Dissipation Derating TC > 25°C
Operating Junction Temperature Range
Storage Junction Temperature Range
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
Max Lead Temp for Soldering (Package Body for 10s)
Electrostatic Discharge Voltage at 100pF, 1500
COLLECTOR
R1
R2
EMITTER
Ratings
390
24
500
300
46
31
±10
250
1.67
-40 to 175
-40 to 175
300
260
4
Units
V
V
mJ
mJ
A
A
V
W
W/°C
°C
°C
°C
°C
kV
©2002 Fairchild Semiconductor Corporation
ISL9V5036S3S / ISl9V5036P3 / ISL9V5036S3 Rev. C1, September 2002

1 Page





ISL9V5036P3 pdf, ピン配列
Typical Characteristics
45
RG = 1K, VGE = 5V,Vdd = 14V
40
35
30
25 TJ = 25°C
20
15 TJ = 150°C
10
5
SCIS Curves valid for Vclamp Voltages of <390V
0
0
50 100 150 200 250 300
350
tCLP, TIME IN CLAMP (µS)
Figure 1. Self Clamped Inductive Switching
Current vs Time in Clamp
1.10
1.05
1.00
ICE = 6A
VGE = 3.7V
VGE = 4.0V
45
RG = 1K, VGE = 5V,Vdd = 14V
40
35
30
25
20
15
TJ = 150°C
10
TJ = 25°C
5
SCIS Curves valid for Vclamp Voltages of <390V
0
02468
L, INDUCTANCE (mHy)
10
Figure 2. Self Clamped Inductive Switching
Current vs Inductance
1.25
1.20
1.15
ICE = 10A
VGE = 3.7V VGE = 4.0V
0.95
0.90
VGE = 4.5V
VGE = 5.0V
VGE = 8.0V
1.10
1.05
VGE = 4.5V
VGE = 5.0V
VGE = 8.0V
0.85
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Collector to Emitter On-State Voltage vs
Junction Temperature
50
VGE = 8.0V
VGE = 5.0V
40 VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
30
1.00
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Collector to Emitter On-State Voltage
vs Junction Temperature
50
VGE = 8.0V
VGE = 5.0V
40 VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
30
20 20
10
TJ = - 40°C
0
0 1.0 2.0 3.0 4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector Current vs Collector Emitter
On-State Voltage
10
0
0
TJ = 25°C
1.0 2.0 3.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
4.0
Figure 6. Collector Current vs Collector Emitter
On-State Voltage
©2002 Fairchild Semiconductor Corporation
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C1, September 2002


3Pages


ISL9V5036P3 電子部品, 半導体
Test Circuits and Waveforms
L
PULSE
GEN
RG
G
C
DUT
E
VCE
RG = 1KG
5V
R
or LOAD
L
C
DUT
+
VCE
-
E
Figure 17. Inductive Switching Test Circuit
Figure 18. tON and tOFF Switching Test Circuit
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VCE
L
DUT
+
VDD
-
IAS
0.01
0
Figure 19. Energy Test Circuit
tP
IAS
BVCES
VCE
VDD
tAV
Figure 20. Energy Waveforms
©2002 Fairchild Semiconductor Corporation
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C1, September 2002

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
ISL9V5036P3

N-Channel Ignition IGBT

Fairchild Semiconductor
Fairchild Semiconductor
ISL9V5036P3

EcoSPARKTM 500mJ/ 360V/ N-Channel Ignition IGBT

Fairchild Semiconductor
Fairchild Semiconductor
ISL9V5036P3_F085

N-Channel Ignition IGBT

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