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PDF ISL9V3040S3S Data sheet ( Hoja de datos )
| Número de pieza | ISL9V3040S3S | |
| Descripción | EcoSPARKTM 300mJ/ 400V/ N-Channel Ignition IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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April 2003
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 /
ISL9V3040S3
EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT
General Description
The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and
ISL9V3040S3 are the next generation ignition IGBTs that offer
outstanding SCIS capability in the space saving D-Pak (TO-252), as
well as the industry standard D²-Pak (TO-263), and TO-262 and TO-
220 plastic packages. This device is intended for use in automotive
ignition circuits, specifically as a coil driver. Internal diodes provide
voltage clamping without the need for external components.
EcoSPARK™ devices can be custom made to specific clamp
voltages. Contact your nearest Fairchild sales office for more
information.
Formerly Developmental Type 49362
Applications
• Automotive Ignition Coil Driver Circuits
• Coil- On Plug Applications
Features
• Space saving D-Pak package availability
• SCIS Energy = 300mJ at TJ = 25oC
• Logic Level Gate Drive
Package
JEDEC TO-263AB
D²-Pak
JEDEC TO-220AB
E CG
Symbol
G
E
JEDEC TO-252AA
D-Pak
G
E
JEDEC TO-262AA
EC
G
GATE
COLLECTOR
(FLANGE)
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
BVCER
BVECS
ESCIS25
ESCIS150
IC25
IC110
VGEM
PD
TJ
TSTG
TL
Tpkg
ESD
Parameter
Collector to Emitter Breakdown Voltage (IC = 1 mA)
Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA)
At Starting TJ = 25°C, ISCIS = 14.2A, L = 3.0 mHy
At Starting TJ = 150°C, ISCIS = 10.6A, L = 3.0 mHy
Collector Current Continuous, At TC = 25°C, See Fig 9
Collector Current Continuous, At TC = 110°C, See Fig 9
Gate to Emitter Voltage Continuous
Power Dissipation Total TC = 25°C
Power Dissipation Derating TC > 25°C
Operating Junction Temperature Range
Storage Junction Temperature Range
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
Max Lead Temp for Soldering (Package Body for 10s)
Electrostatic Discharge Voltage at 100pF, 1500Ω
COLLECTOR
R1
R2
EMITTER
Ratings
430
24
300
170
21
17
±10
150
1.0
-40 to 175
-40 to 175
300
260
4
Units
V
V
mJ
mJ
A
A
V
W
W/°C
°C
°C
°C
°C
kV
©2003 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003
1 page  
Typical Performance Curves (Continued)
1600
FREQUENCY = 1 MHz
1200
800
CIES
CRES
400
COES
0
0
5 10 15 20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
25
Figure 13. Capacitance vs Collector to Emitter
Voltage
8
IG(REF) = 1mA, RL = 1.25Ω, TJ = 25°C
7
6
5
VCE = 12V
4
3
2
VCE = 6V
1
0
0 4 8 12 16 20 24 28 32
QG, GATE CHARGE (nC)
Figure 14. Gate Charge
430
ICER = 10mA
425
420
415
410
405
400
395
390
10
TJ = 175°C
TJ = 25°C
100
TJ = - 40°C
1000
2000 3000
RG, SERIES GATE RESISTANCE (kΩ)
Figure 15. Breakdown Voltage vs Series Gate Resistance
100 0.5
0.2
0.1
10-1 0.05
0.02
0.01
10-2
t1
PD
t2
10-3
10-6
SINGLE PULSE
10-5
10-4
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-3
10-2
10-1
T1, RECTANGULAR PULSE DURATION (s)
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
©2003 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet ISL9V3040S3S.PDF ] | |
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