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ISL9V3040D3S の電気的特性と機能

ISL9V3040D3SのメーカーはFairchild Semiconductorです、この部品の機能は「EcoSPARKTM 300mJ/ 400V/ N-Channel Ignition IGBT」です。


製品の詳細 ( Datasheet PDF )

部品番号 ISL9V3040D3S
部品説明 EcoSPARKTM 300mJ/ 400V/ N-Channel Ignition IGBT
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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ISL9V3040D3S Datasheet, ISL9V3040D3S PDF,ピン配置, 機能
April 2003
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 /
ISL9V3040S3
EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT
General Description
The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and
ISL9V3040S3 are the next generation ignition IGBTs that offer
outstanding SCIS capability in the space saving D-Pak (TO-252), as
well as the industry standard D²-Pak (TO-263), and TO-262 and TO-
220 plastic packages. This device is intended for use in automotive
ignition circuits, specifically as a coil driver. Internal diodes provide
voltage clamping without the need for external components.
EcoSPARK™ devices can be custom made to specific clamp
voltages. Contact your nearest Fairchild sales office for more
information.
Formerly Developmental Type 49362
Applications
• Automotive Ignition Coil Driver Circuits
• Coil- On Plug Applications
Features
• Space saving D-Pak package availability
• SCIS Energy = 300mJ at TJ = 25oC
• Logic Level Gate Drive
Package
JEDEC TO-263AB
D²-Pak
JEDEC TO-220AB
E CG
Symbol
G
E
JEDEC TO-252AA
D-Pak
G
E
JEDEC TO-262AA
EC
G
GATE
COLLECTOR
(FLANGE)
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
BVCER
BVECS
ESCIS25
ESCIS150
IC25
IC110
VGEM
PD
TJ
TSTG
TL
Tpkg
ESD
Parameter
Collector to Emitter Breakdown Voltage (IC = 1 mA)
Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA)
At Starting TJ = 25°C, ISCIS = 14.2A, L = 3.0 mHy
At Starting TJ = 150°C, ISCIS = 10.6A, L = 3.0 mHy
Collector Current Continuous, At TC = 25°C, See Fig 9
Collector Current Continuous, At TC = 110°C, See Fig 9
Gate to Emitter Voltage Continuous
Power Dissipation Total TC = 25°C
Power Dissipation Derating TC > 25°C
Operating Junction Temperature Range
Storage Junction Temperature Range
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
Max Lead Temp for Soldering (Package Body for 10s)
Electrostatic Discharge Voltage at 100pF, 1500
COLLECTOR
R1
R2
EMITTER
Ratings
430
24
300
170
21
17
±10
150
1.0
-40 to 175
-40 to 175
300
260
4
Units
V
V
mJ
mJ
A
A
V
W
W/°C
°C
°C
°C
°C
kV
©2003 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003

1 Page





ISL9V3040D3S pdf, ピン配列
Typical Performance Curves (Continued)
30 30
RG = 1k, VGE = 5V,Vdd = 14V
RG = 1k, VGE = 5V,Vdd = 14V
25 25
20 20
15
TJ = 150°C
10
TJ = 25°C
5
SCIS Curves valid for Vclamp Voltages of <430V
0
0
25 50 75 100 125 150 175
200
tCLP, TIME IN CLAMP (µS)
Figure 1. Self Clamped Inductive Switching
Current vs Time in Clamp
15
10
TJ = 150°C
TJ = 25°C
5
SCIS Curves valid for Vclamp Voltages of <430V
0
02468
10
L, INDUCTANCE (mHy)
Figure 2. Self Clamped Inductive Switching
Current vs Inductance
1.30
1.26
ICE = 6A
VGE = 3.7V
VGE = 4.0V
1.22
1.18
VGE = 8.0V
VGE = 4.5V
VGE = 5.0V
1.14
-75 -50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Collector to Emitter On-State Voltage vs
Junction Temperature
25
VGE = 8.0V
VGE = 5.0V
20 VGE = 4.5V
VGE = 4.0V
15 VGE = 3.7V
1.8
ICE = 10A
1.7
VGE = 3.7V
1.6 VGE = 4.0V
1.5
1.4
VGE = 4.5V
VGE = 5.0V
1.3
VGE = 8.0V
1.2
-75 -50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Collector to Emitter On-State Voltage
vs Junction Temperature
25
VGE = 8.0V
VGE = 5.0V
20 VGE = 4.5V
VGE = 4.0V
15 VGE = 3.7V
10 10
5
0
0
TJ = - 40°C
1.0 2.0 3.0 4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage vs
Collector Current
5
0
0
1.0 2.0
TJ = 25°C
3.0 4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 6. Collector to Emitter On-State Voltage
vs Collector Current
©2003 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003


3Pages


ISL9V3040D3S 電子部品, 半導体
Test Circuit and Waveforms
L
C
PULSE
GEN
RG
G
DUT
E
VCE
RG = 1K
5V
R
or LOAD
L
C
G DUT
E
+
VCE
-
Figure 17. Inductive Switching Test Circuit
Figure 18. tON and tOFF Switching Test Circuit
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGE
tP
0V
VCE
C
RG G
DUT
L
+
VDD
-
E
IAS
0.01
0
Figure 19. Energy Test Circuit
tP
IAS
BVCES
VCE
VDD
tAV
Figure 20. Energy Waveforms
©2003 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D2, April 2003

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
ISL9V3040D3S

N-Channel Ignition IGBT

Fairchild Semiconductor
Fairchild Semiconductor
ISL9V3040D3S

EcoSPARKTM 300mJ/ 400V/ N-Channel Ignition IGBT

Fairchild Semiconductor
Fairchild Semiconductor
ISL9V3040D3S

N-CHANNEL IGNITION IGBT

Unisonic Technologies
Unisonic Technologies


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