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ISL9V2040P3のメーカーはFairchild Semiconductorです、この部品の機能は「N-Channel Ignition IGBT」です。 |
部品番号 | ISL9V2040P3 |
| |
部品説明 | N-Channel Ignition IGBT | ||
メーカ | Fairchild Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとISL9V2040P3ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
October 20
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3
EcoSPARK 200mJ, 400V, N-Channel Ignition IGBT
General Description
The ISL9V2040D3S, ISL9V2040S3S, and ISL9V2040P3 are the
next generation ignition IGBTs that offer outstanding SCIS
capability in the space saving D-Pak (TO-252), as well as the
industry standard D²-Pak (TO-263) and TO-220 plastic packages.
This device is intended for use in automotive ignition circuits,
specifically as a coil driver. Internal diodes provide voltage clamping
without the need for external components.
EcoSPARK devices can be custom made to specific clamp
voltages. Contact your nearest Fairchild sales office for more
information.
Formerly Developmental Type 49444
Applications
• Automotive Ignition Coil Driver Circuits
• Coil- On Plug Applications
Features
• Space saving D - Pak package available
• SCIS Energy = 200mJ at TJ = 25oC
• Logic Level Gate Drive
Package
JEDEC TO-252AA JEDEC TO-263AB
D-Pak
D²-Pak
GG
EE
Symbol
JEDEC TO-220AB
E
C
G
GATE
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
BVCER
BVECS
ESCIS25
ESCIS150
IC25
IC110
VGEM
PD
TJ
TSTG
TL
Tpkg
ESD
Parameter
Collector to Emitter Breakdown Voltage (IC = 1 mA)
Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA)
At Starting TJ = 25°C, ISCIS = 11.5A, L = 3.0mHy
At Starting TJ = 150°C, ISCIS = 8.9A, L = 3.0mHy
Collector Current Continuous, At TC = 25°C, See Fig 9
Collector Current Continuous, At TC = 110°C, See Fig 9
Gate to Emitter Voltage Continuous
Power Dissipation Total TC = 25°C
Power Dissipation Derating TC > 25°C
Operating Junction Temperature Range
Storage Junction Temperature Range
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
Max Lead Temp for Soldering (Package Body for 10s)
Electrostatic Discharge Voltage at 100pF, 1500Ω
COLLECTOR
R1
R2
EMITTER
Ratings
430
24
200
120
10
10
±10
130
0.87
-40 to 175
-40 to 175
300
260
4
Units
V
V
mJ
mJ
A
A
V
W
W/°C
°C
°C
°C
°C
kV
©2004 Fairchild Semiconductor Corporation
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B, October 20
1 Page Typical Performance Curves
20
RG = 1KΩ, VGE = 5V,Vdd = 14V
18
16
14
12 TJ = 25°C
10 TJ = 150°C
8
6
4
2
SCIS Curves valid for Vclamp Voltages of <430V
0
0 20 40 60 80 100 120 140 160 180 200
tCLP, TIME IN CLAMP (µS)
Figure 1. Self Clamped Inductive Switching
Current vs Time in Clamp
20
RG = 1KΩ, VGE = 5V,Vdd = 14V
18
16
14
TJ = 25°C
12
10
8
TJ = 150°C
6
4
2
SCIS Curves valid for Vclamp Voltages of <430V
0
02468
10
L, INDUCTANCE (mHy)
Figure 2. Self Clamped Inductive Switching
Current vs Inductance
1.60
1.55
ICE = 6A
VGE = 3.7V
1.50
1.45
VGE = 4.0V
1.40
1.35
1.30
1.25
-75
VGE = 8.0V
-25 25
VGE = 4.5V
VGE = 5.0V
75 125 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Collector to Emitter On-State Voltage vs
Junction Temperature
20
VGE = 8.0V
VGE = 5.0V
15 VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
10
2.4
ICE = 10A
2.2
2.0
VGE = 3.7V
VGE = 4.0V
1.8
VGE = 4.5V
1.6
1.4
-75
VGE = 5.0V
VGE = 8.0V
-25 25 75 125 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Collector to Emitter On-State Voltage
vs Junction Temperature
20
VGE = 8.0V
VGE = 5.0V
15 VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
10
5
TJ = - 40°C
0
0 1.0 2.0 3.0 4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage vs
Collector Current
5
0
0
TJ = 25°C
1.0 2.0 3.0 4.0
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 6. Collector to Emitter On-State Voltage
vs Collector Current
©2004 Fairchild Semiconductor Corporation
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B, October 20
3Pages Test Circuit and Waveforms
L
PULSE
GEN
RG
G
C
DUT
E
VCE
RG = 1KΩ G
5V
R
or LOAD
L
C
DUT
+
VCE
-
E
Figure 17. Inductive Switching Test Circuit
Figure 18. tON and tOFF Switching Test Circuit
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGE
tP
0V
RG
VCE
L
DUT
+
VDD
-
IAS
0.01Ω
Figure 19. Unclamped Energy Test Circuit
tP
IAS
BVCES
VCE
VDD
0
tAV
Figure 20. Unclamped Energy Waveforms
©2004 Fairchild Semiconductor Corporation
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B, October 20
6 Page | |||
ページ | 合計 : 8 ページ | ||
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部品番号 | 部品説明 | メーカ |
ISL9V2040P3 | N-Channel Ignition IGBT | Fairchild Semiconductor |
ISL9V2040P3 | N-Channel Ignition IGBT | Fairchild Semiconductor |