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PDF ISL9V2040D3S Data sheet ( Hoja de datos )
| Número de pieza | ISL9V2040D3S | |
| Descripción | N-Channel Ignition IGBT | |
| Fabricantes | Fairchild Semiconductor | |
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October 20
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3
EcoSPARK 200mJ, 400V, N-Channel Ignition IGBT
General Description
The ISL9V2040D3S, ISL9V2040S3S, and ISL9V2040P3 are the
next generation ignition IGBTs that offer outstanding SCIS
capability in the space saving D-Pak (TO-252), as well as the
industry standard D²-Pak (TO-263) and TO-220 plastic packages.
This device is intended for use in automotive ignition circuits,
specifically as a coil driver. Internal diodes provide voltage clamping
without the need for external components.
EcoSPARK devices can be custom made to specific clamp
voltages. Contact your nearest Fairchild sales office for more
information.
Formerly Developmental Type 49444
Applications
• Automotive Ignition Coil Driver Circuits
• Coil- On Plug Applications
Features
• Space saving D - Pak package available
• SCIS Energy = 200mJ at TJ = 25oC
• Logic Level Gate Drive
Package
JEDEC TO-252AA JEDEC TO-263AB
D-Pak
D²-Pak
GG
EE
Symbol
JEDEC TO-220AB
E
C
G
GATE
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
BVCER
BVECS
ESCIS25
ESCIS150
IC25
IC110
VGEM
PD
TJ
TSTG
TL
Tpkg
ESD
Parameter
Collector to Emitter Breakdown Voltage (IC = 1 mA)
Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA)
At Starting TJ = 25°C, ISCIS = 11.5A, L = 3.0mHy
At Starting TJ = 150°C, ISCIS = 8.9A, L = 3.0mHy
Collector Current Continuous, At TC = 25°C, See Fig 9
Collector Current Continuous, At TC = 110°C, See Fig 9
Gate to Emitter Voltage Continuous
Power Dissipation Total TC = 25°C
Power Dissipation Derating TC > 25°C
Operating Junction Temperature Range
Storage Junction Temperature Range
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
Max Lead Temp for Soldering (Package Body for 10s)
Electrostatic Discharge Voltage at 100pF, 1500Ω
COLLECTOR
R1
R2
EMITTER
Ratings
430
24
200
120
10
10
±10
130
0.87
-40 to 175
-40 to 175
300
260
4
Units
V
V
mJ
mJ
A
A
V
W
W/°C
°C
°C
°C
°C
kV
©2004 Fairchild Semiconductor Corporation
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B, October 20
1 page  
Typical Performance Curves (Continued)
1200
1000
FREQUENCY = 1 MHz
800
CIES
600
400
CRES
200 COES
0
0
5 10 15 20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
25
Figure 13. Capacitance vs Collector to Emitter
Voltage
8
IG(REF) = 1mA, RL = 1.25Ω, TJ = 25°C
7
6
VCE = 12V
5
4
3
2
VCE = 6V
1
0
0
5 10 15 20
QG, GATE CHARGE (nC)
Figure 14. Gate Charge
25
415
410
405
400
395
390
385
380
375
370
10
TJ = 175°C
TJ = 25°C
ICER = 10mA
TJ = - 40°C
100 1000
RG, SERIES GATE RESISTANCE (Ω)
Figure 15. Breakdown Voltage vs Series Gate Resistance
2000 3000
100
0.5
0.2
0.1
10-1 0.05
10-2
10-5
0.02
0.01
SINGLE PULSE
10-4
10-3
t1
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-2
10-1
100
T1, RECTANGULAR PULSE DURATION (s)
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
©2004 Fairchild Semiconductor Corporation
ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B, October 20
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet ISL9V2040D3S.PDF ] | |
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