PDF ISL9R3060P2 Data sheet ( Hoja de datos )

Número de pieza	ISL9R3060P2
Descripción	30A/ 600V Stealth Diode
Fabricantes	Fairchild Semiconductor
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No Preview Available ! May 2002 ISL9R3060G2, ISL9R3060P2 30A, 600V Stealth™ Diode General Description The ISL9R3060G2 and ISL9R3060P2 are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRM(REC) and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. Formerly developmental type TA49411. Features • Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 1.2 • Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 35ns • Operating Temperature . . . . . . . . . . . . . . . . . . . . 175oC • Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V • Avalanche Energy Rated Applications • Switch Mode Power Supplies • Hard Switched PFC Boost Diode • UPS Free Wheeling Diode • Motor Drive FWD • SMPS FWD • Snubber Diode Package CATHODE (BOTTOM SIDE METAL) JEDEC STYLE TO-247 ANODE CATHODE JEDEC TO-220AC CATHODE (FLANGE) ANODE CATHODE Symbol K A Device Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units VRRM VRWM VR IF(AV) IFRM IFSM PD EAVL TJ, TSTG TL TPKG Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TC = 125oC) Repetitive Peak Surge Current (20kHz Square Wave) Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) Power Dissipation Avalanche Energy (1A, 40mH) Operating and Storage Temperature Range Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334 600 600 600 30 70 325 200 20 -55 to 175 300 260 V V V A A A W mJ °C °C °C CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. ©2002 Fairchild Semiconductor Corporation ISL9R3060G2, ISL9R3060P2 Rev. C 1 page TyepsticCailrPcueirtfoarnmdaWncaeveCfourmvess (Continued) VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L VGE t1 t2 DUT CURRENT RG SENSE + MOSFET - VDD IF 0 dIF dt trr ta tb 0.25 IRM IRM Figure 12. trr Test Circuit I = 1A L = 40mH R < 0.1Ω VDD = 50V EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 DUT R + VDD VDD - Figure 14. Avalanche Energy Test Circuit Figure 13. trr Waveforms and Definitions VAVL IL IV IL t0 t1 t2 t Figure 15. Avalanche Current and Voltage Waveforms 1560©2002 Fairchild Semiconductor Corporation ISL9R3060G2, ISL9R3060P2 Rev. C 5 Page

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