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ISL9R18120S3S の電気的特性と機能

ISL9R18120S3SのメーカーはFairchild Semiconductorです、この部品の機能は「18A/ 1200V Stealth Diode」です。


製品の詳細 ( Datasheet PDF )

部品番号 ISL9R18120S3S
部品説明 18A/ 1200V Stealth Diode
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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ISL9R18120S3S Datasheet, ISL9R18120S3S PDF,ピン配置, 機能
May 2002
ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S
18A, 1200V Stealth™ Diode
General Description
The ISL9R18120G2, ISL9R18120P2 and ISL9R18120S3S are
Stealth™ diodes optimized for low loss performance in high
frequency hard switched applications. The Stealth™ family
exhibits low reverse recovery current (IRM(REC)) and
exceptionally soft recovery under typical operating conditions.
This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching
applications. The low IRM(REC) and short ta phase reduce loss
in switching transistors. The soft recovery minimizes ringing,
expanding the range of conditions under which the diode may
be operated without the use of additional snubber circuitry.
Consider using the Stealth™ diode with a 1200V NPT IGBT to
provide the most efficient and highest power density design at
lower cost.
Formerly developmental type TA49414.
Features
• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 5.0
• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 45ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 150oC
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
• Avalanche Energy Rated
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
Package
Symbol
2 LEAD TO-247
ANODE
CATHODE
JEDEC TO-220AC
JEDEC TO-263AB
ANODE
CATHODE
CATHODE
(FLANGE)
K
N/C
CATHODE
(BOTTOM SIDE
METAL)
CATHODE
(FLANGE)
ANODE
A
Device Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
PD
EAVL
TJ, TSTG
TL
TPKG
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (TC = 92oC)
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
Avalanche Energy (1A, 40mH)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Application Note AN-7528
1200
1200
1200
18
36
200
125
20
-55 to 150
300
260
V
V
V
A
A
A
W
mJ
°C
°C
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2002 Fairchild Semiconductor Corporation
ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S Rev. A

1 Page





ISL9R18120S3S pdf, ピン配列
Typical Performance Curves
30
25
20
15
150oC
10 125oC
100oC
5
25oC
0
0.25 0.75 1.25 1.75 2.25 2.75 3.25
VF, FORWARD VOLTAGE (V)
Figure 1. Forward Current vs Forward Voltage
600 VR = 780V, TC = 125oC
tb AT dIF/dt = 200A/µs, 500A/µs, 800A/µs
500
400
300
200
100 ta AT dIF/dt = 200A/µs, 500A/µs, 800A/µs
0
0 3 6 9 12 15 18 21 24 27 30
IF, FORWARD CURRENT (A)
Figure 3. ta and tb Curves vs Forward Current
25
VR = 780V, TC = 125oC
dIF/dt = 800A/µs
20
dIF/dt = 600A/µs
15
1000
100
10
1
0.1
150oC
125oC
100oC
75oC
25oC
0.01
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VR, REVERSE VOLTAGE (kV)
Figure 2. Reverse Current vs Reverse Voltage
600
VR = 780V, TC = 125oC
500
tb AT IF = 30A, 15A, 7.5A
400
300
200
100
ta AT IF = 30A, 15A, 7.5A
0
200
400
600
800
1000
1200
dIF/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 4. ta and tb Curves vs dIF/dt
1400
25
VR = 780V, TC = 125oC
20
IF = 30A
IF = 15A
IF = 7.5A
15
10
dIF/dt = 200A/µs
10
5
0 3 6 9 12 15 18 21 24 27 30
IF, FORWARD CURRENT (A)
Figure 5. Maximum Reverse Recovery Current vs
Forward Current
5
200
400
600
800
1000
1200
1400
dIF/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 6. Maximum Reverse Recovery Current vs
dIF/dt
©2002 Fairchild Semiconductor Corporation
ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S Rev. A


3Pages


ISL9R18120S3S 電子部品, 半導体
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
FAST â
MICROWIRE™
SILENT SWITCHER â
Bottomless™
FASTr™
OPTOLOGIC â
SMART START™
CoolFET™
FRFET™
OPTOPLANAR™ SPM™
CROSSVOLT™
GlobalOptoisolator™ PACMAN™
STAR*POWER™
DenseTrench™
GTO™
POP™
Stealth™
DOME™
HiSeC™
Power247™
SuperSOT™-3
EcoSPARK™
I2
PowerTrench â
SuperSOT™-6
E2CMOSTM
ISOPLANAR™
QFET™
SuperSOT™-8
EnSignaTM
LittleFET™
QS™
SyncFET™
FACT™
MicroFET™
QT Optoelectronics™ TinyLogic™
FACT Quiet Series™ MicroPak™
Quiet Series™
TruTranslation™
UHC™
UltraFET â
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTENAPPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
effectiveness.
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H5

6 Page



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部品番号部品説明メーカ
ISL9R18120S3S

18A/ 1200V Stealth Diode

Fairchild Semiconductor
Fairchild Semiconductor


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