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PDF ISL9N7030BLP3 Data sheet ( Hoja de datos )
| Número de pieza | ISL9N7030BLP3 | |
| Descripción | 30V/ 0.009 Ohm/ 75A/ N-Channel Logic Level UltraFET Trench Power MOSFETs | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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Data Sheet
ISL9N7030BLP3, ISL9N7030BLS3ST
January2002
30V, 0.009 Ohm, 75A, N-Channel Logic
Level UltraFET® Trench Power MOSFETs
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Packaging
ISL9N7030BLS3ST
JEDEC TO-263AB
ISL9N7030BLP3
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
PWM
Optimized
Features
• Fast Switching
• rDS(ON) = 0.0064Ω (Typ), VGS = 10V
• rDS(ON) = 0.010Ω (Typ), VGS = 4.5V
• Qg Total 24nC (Typ), VGS = 5V
• Qgd (Typ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11nC
• CISS (Typ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2600pF
Symbol
D
GATE
SOURCE
DRAIN
(FLANGE)
G
S
Ordering Information
PART NUMBER
PACKAGE
BRAND
ISL9N7030BLP3
TO-220AB
7030BL
ISL9N7030BLS3ST TO-263AB (Tape and Reel) 7030BL
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
SYMBOL
PARAMETER
ISL9N7030BLP3, ISL9N7030BLS3ST
UNITS
VDSS Drain to Source Voltage (Note 1)
30 V
VDGR Drain to Gate Voltage (RGS = 20kΩ) (Note 1)
30 V
VGS Gate to Source Voltage
±20 V
Drain Current
ID
ID
Continuous
Continuous
(TC
(TC
=
=
12050oCoC, ,VVGGSS==140.V5)V()F(iFguigruer2e)2)
ID Continuous (TC = 25oC, VGS = 10V, RθJA = 43oC/W)
IDM Pulsed Drain Current
75
48
15
Figure 4
A
A
A
A
PD
Power Dissipation
Derate Above 25oC
100
0.67
W
W/oC
TJ, TSTG Operating and Storage Temperature
-55 to 175
oC
TL
Tpkg
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
300 oC
260 oC
THERMAL SPECIFICATIONS
RθJC Thermal Resistance Junction to Case, TO-220, TO-263
1.5 oC/W
RθJA Thermal Resistance Junction to Ambient, TO-220, TO-263
62 oC/W
RθJA Thermal Resistance Junction to Ambient, TO-263, 1in2 copper pad area
43
oC/W
NOTE:
1. TJ = 25oC to 150oC.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive products.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2002 Fairchild Semiconductor Corporation
ISL9N7030BLP3, ISL9N7030BLS3ST Rev. B
1 page  
ISL9N7030BLP3, ISL9N7030BLS3ST
Typical Performance Curves (Continued)
4000
1000
CISS = CGS + CGD
COSS ≅ CDS + CGD
CRSS = CGD
VGS = 0V, f = 1MHz
100
0.1 1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
10
VDD = 15V
8
6
4
WAVEFORMS IN
2 DESCENDING ORDER:
ID = 48A
ID = 14A
0
0 10 20 30 40 50
Qg, GATE CHARGE (nC)
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 12. GATE CHARGE WAVEFORMS FOR CONSTANT
GATE CURRENT
250
VGS = 4.5V, VDD = 15V, ID = 15A
200
150
100
50
tr
td(OFF)
tf
td(ON)
0
0 10 20 30 40 50
RGS, GATE TO SOURCE RESISTANCE (Ω)
FIGURE 13. SWITCHING TIME vs GATE RESISTANCE
Test Circuits and Waveforms
VDS
RL
VGS
Ig(REF)
DUT
+
VDD
-
FIGURE 15. GATE CHARGE TEST CIRCUIT
350
VGS = 10V, VDD = 15V, ID = 15A
300
250
td(OFF)
200
150
tf
100
tr
50 td(ON)
0
0 10 20 30 40 50
RGS, GATE TO SOURCE RESISTANCE (Ω)
FIGURE 14. SWITCHING TIME vs GATE RESISTANCE
VDD
VDS
Qg(TOT)
VGS
VGS = 1V
0 Qg(TH)
Qgs
Ig(REF)
0
Qg(5)
Qgd
VGS = 5V
VGS = 10V
FIGURE 16. GATE CHARGE WAVEFORMS
©2002 Fairchild Semiconductor Corporation
ISL9N7030BLP3, ISL9N7030BLS3ST Rev. B
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet ISL9N7030BLP3.PDF ] | |
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