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ISL9N322AD3ST PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 ISL9N322AD3ST
部品説明 N-Channel Logic Level UltraFET Trench MOSFET 30V/ 20A/ 0.022
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 



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ISL9N322AD3ST Datasheet, ISL9N322AD3ST PDF,ピン配置, 機能
January 2002
PWM Optimized
ISL9N322AD3ST
N-Channel Logic Level UltraFET® Trench MOSFET
30V, 20A, 0.022
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Applications
• DC/DC converters
Features
• Fast switching
• rDS(ON) = 0.018(Typ), VGS = 10V
• rDS(ON) = 0.028(Typ), VGS = 4.5V
• Qg (Typ) = 9nC, VGS = 5V
• Qgd (Typ) =3nC
• CISS (Typ) =970pF
DRAIN (FLANGE)
D
GATE
SOURCE
TO-252
G
S
MOSFET Maximum Ratings TA=25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 100oC, VGS = 4.5V)
Continuous (TC = 25oC, VGS = 10V, RθJA=52oC)
Pulsed
PD
Power dissipation
Derate above 25oC
TJ, TSTG
Operating and Storage Temperature
Ratings
30
±20
20
20
8
Figure 4
50
0.33
-55 to 175
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
3
100
52
Package Marking and Ordering Information
Device Marking
N322AD
Device
ISL9N322AD3ST
Package
TO-252AA
Reel Size
330mm
Tape Width
16mm
Units
V
V
A
A
A
A
W
W/oC
oC
oC/W
oC/W
oC/W
Quantity
2500 units
©2002 Fairchild Semiconductor Corporation
Rev.B, January 2002

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ISL9N322AD3ST

N-Channel Logic Level UltraFET Trench MOSFET 30V/ 20A/ 0.022

Fairchild Semiconductor
Fairchild Semiconductor

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