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ISL9N308AD3ST PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 ISL9N308AD3ST
部品説明 N-Channel Logic Level UltraFET Trench Power MOSFETs 30V/ 50A/ 8m
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 



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ISL9N308AD3ST Datasheet, ISL9N308AD3ST PDF,ピン配置, 機能
June 2002
PWM Optimized
ISL9N308AD3 / ISL9N308AD3ST
N-Channel Logic Level UltraFET® Trench Power MOSFETs
30V, 50A, 8m
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Features
• Fast switching
• rDS(ON) = 0.0064(Typ), VGS = 10V
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
• rDS(ON) = 0.010(Typ), VGS = 4.5V
• Qg (Typ) = 24nC, VGS = 5V
Applications
• DC/DC converters
• Qgd (Typ) = 8nC
• CISS (Typ) = 2600pF
D
G
S
DTO-P-2A5K2
(TO-252)
GDS
I-PAK
(TO-251AA)
D
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V) Note 1
Continuous (TC = 100oC, VGS = 4.5V) Note 1
Continuous (TC = 25oC, VGS = 10V, RθJC = 52oC/W)
Pulsed
PD
TJ, TSTG
Power dissipation
Derate above 25oC
Operating and Storage Temperature
Ratings
30
±20
50
48
14
Figure 4
100
0.67
-55 to 175
Units
V
V
A
A
A
A
W
W/oC
oC
Thermal Characteristics
RθJC
Thermal Resistance Junction to Case TO-252, TO-251
1.5 oC/W
RθJA
Thermal Resistance Junction to Ambient TO-252, TO-251
100 oC/W
RθJA
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
52
oC/W
Package Marking and Ordering Information
Device Marking
N308AD
N308AD
Device
ISL9N308AD3ST
ISL9N308AD3
Package
TO-252AA
TO-251AA
Reel Size
330mm
Tube
Tape Width
16mm
N/A
Quantity
2500 units
75 units
©2002 Fairchild Semiconductor Corporation
ISL9N308AD3 / ISL9N308AD3ST Rev C

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ISL9N308AD3ST

N-Channel Logic Level UltraFET Trench Power MOSFETs 30V/ 50A/ 8m

Fairchild Semiconductor
Fairchild Semiconductor

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