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ISL9N2357D3ST PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 ISL9N2357D3ST
部品説明 30V/ 0.007 Ohm/ 35A/ N-Channel UltraFET Trench Power MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 



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ISL9N2357D3ST Datasheet, ISL9N2357D3ST PDF,ピン配置, 機能
Data Sheet
ISL9N2357D3ST
June 2002
30V, 0.007 Ohm, 35A, N-Channel
UltraFET® Trench Power MOSFET
UltraFET® Trench from Fairchild is a new advanced
MOSFET technology that achieves the lowest possible on-
resistance per silicon area while maintaining fast switching
and low gate charge. The reduced conduction and switching
losses extend battery life in notebook PCs, cellular
telephones and other portable information appliances and
improve the overall efficiency of high frequency DC-DC
converters used to power the latest microprocessors.
Packaging
ISL9N2357D3ST
JEDEC TO-252AA
DRAIN (FLANGE)
UltraFET® Trench
Features
• rDS(ON) = 0.006Typical, VGS = 10V
• Qg Total 85nC Typical, VGS = 10V
• Qgd 16nC Typical
• CISS 5600pF Typical
Symbol
D
G
GATE
SOURCE
S
Ordering Information
PART NUMBER
PACKAGE
BRAND
ISL9N2357D3ST
TO-252AA
N2357D
NOTE: When ordering, use the entire part number.
e.g., ISL9N2357D3ST.
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
SYMBOL
PARAMETER
ISL9N2357D3ST
UNITS
VDSS
Drain to Source Voltage (Note 1)
30 V
VDGR
Drain to Gate Voltage (RGS = 20k) (Note 1)
30 V
VGS Gate to Source Voltage
±20 V
Drain Current
ID
ID
Continuous
Continuous
(TC
(TC
=
=
1205o0CoC, V, VGGSS==101V0V) )(Figure
2)
IDM Pulsed Drain Current
35
35
Figure 4
A
A
A
PD Power Dissipation
Derate Above 25oC
100
0.67
W
W/oC
TJ, TSTG
Operating and Storage Temperature
-55 to 175
oC
TL
Tpkg
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
300 oC
260 oC
THERMAL SPECIFICATIONS
RθJC
RθJA
Thermal Resistance Junction to Case, TO-252
Thermal Resistance Junction to Ambient TO-252
1.5 oC/W
100 oC/W
NOTE:
1. TJ = 25oC to 150oC.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2002 Fairchild Semiconductor Corporation
ISL9N2357D3ST Rev. B1

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30V/ 0.007 Ohm/ 35A/ N-Channel UltraFET Trench Power MOSFET

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