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ISL9K8120P3 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 ISL9K8120P3
部品説明 8A/ 1200V Stealth Dual Diode
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 



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ISL9K8120P3 Datasheet, ISL9K8120P3 PDF,ピン配置, 機能
May 2002
ISL9K8120P3
8A, 1200V Stealth™ Dual Diode
General Description
The ISL9K8120P3 is a Stealth™ dual diode optimized for low
loss performance in high frequency hard switched applications.
The Stealth™ family exhibits low reverse recovery current
(IRM(REC)) and exceptionally soft recovery under typical
operating conditions.
This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching
applications. The low IRM(REC) and short ta phase reduce loss
in switching transistors. The soft recovery minimizes ringing,
expanding the range of conditions under which the diode may
be operated without the use of additional snubber circuitry.
Consider using the Stealth™ diode with a 1200V NPT IGBT to
provide the most efficient and highest power density design at
lower cost.
Formerly developmental type TA49413.
Features
• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 5.5
• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 32ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 150oC
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
• Avalanche Energy Rated
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
Package
JEDEC TO-220AB
CATHODE
(FLANGE)
ANODE 2
CATHODE
ANODE 1
Symbol
K
A1 A2
Device Maximum Ratings (per leg) TC = 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
VRRM
VRWM
VR
IF(AV)
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (TC = 105oC)
Total Device Current (Both Legs)
1200
1200
1200
8
16
V
V
V
A
A
IFRM
IFSM
PD
EAVL
TJ, TSTG
TL
TPKG
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
Avalanche Energy (1A, 40mH)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Application Note AN-7528
16
100
71
20
-55 to 150
300
260
A
A
W
mJ
°C
°C
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2002 Fairchild Semiconductor Corporation
ISL9K8120P3 Rev. A

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8A/ 1200V Stealth Dual Diode

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