DataSheet.es    


Datasheet IDT74FCT163501 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1IDT74FCT1635013.3V CMOS 18-BIT REGISTERED TRANSCEIVER

3.3V CMOS 18-BIT REGISTERED TRANSCEIVER Integrated Device Technology, Inc. IDT74FCT163501/A/C FEATURES: • 0.5 MICRON CMOS Technology • Typical tSK(o) (Output Skew) < 250ps • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Packages include 25 mil pi
Integrated Device Technology
Integrated Device Technology
transceiver
2IDT74FCT163501A3.3V CMOS 18-BIT REGISTERED TRANSCEIVER

3.3V CMOS 18-BIT REGISTERED TRANSCEIVER Integrated Device Technology, Inc. IDT74FCT163501/A/C FEATURES: • 0.5 MICRON CMOS Technology • Typical tSK(o) (Output Skew) < 250ps • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Packages include 25 mil pi
Integrated Device Technology
Integrated Device Technology
transceiver
3IDT74FCT163501APA3.3V CMOS 18-BIT REGISTERED TRANSCEIVER

3.3V CMOS 18-BIT REGISTERED TRANSCEIVER Integrated Device Technology, Inc. IDT74FCT163501/A/C FEATURES: • 0.5 MICRON CMOS Technology • Typical tSK(o) (Output Skew) < 250ps • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Packages include 25 mil pi
Integrated Device Technology
Integrated Device Technology
transceiver
4IDT74FCT163501APF3.3V CMOS 18-BIT REGISTERED TRANSCEIVER

3.3V CMOS 18-BIT REGISTERED TRANSCEIVER Integrated Device Technology, Inc. IDT74FCT163501/A/C FEATURES: • 0.5 MICRON CMOS Technology • Typical tSK(o) (Output Skew) < 250ps • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Packages include 25 mil pi
Integrated Device Technology
Integrated Device Technology
transceiver
5IDT74FCT163501APV3.3V CMOS 18-BIT REGISTERED TRANSCEIVER

3.3V CMOS 18-BIT REGISTERED TRANSCEIVER Integrated Device Technology, Inc. IDT74FCT163501/A/C FEATURES: • 0.5 MICRON CMOS Technology • Typical tSK(o) (Output Skew) < 250ps • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Packages include 25 mil pi
Integrated Device Technology
Integrated Device Technology
transceiver
6IDT74FCT163501C3.3V CMOS 18-BIT REGISTERED TRANSCEIVER

3.3V CMOS 18-BIT REGISTERED TRANSCEIVER Integrated Device Technology, Inc. IDT74FCT163501/A/C FEATURES: • 0.5 MICRON CMOS Technology • Typical tSK(o) (Output Skew) < 250ps • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Packages include 25 mil pi
Integrated Device Technology
Integrated Device Technology
transceiver
7IDT74FCT163501PA3.3V CMOS 18-BIT REGISTERED TRANSCEIVER

3.3V CMOS 18-BIT REGISTERED TRANSCEIVER Integrated Device Technology, Inc. IDT74FCT163501/A/C FEATURES: • 0.5 MICRON CMOS Technology • Typical tSK(o) (Output Skew) < 250ps • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Packages include 25 mil pi
Integrated Device Technology
Integrated Device Technology
transceiver
8IDT74FCT163501PF3.3V CMOS 18-BIT REGISTERED TRANSCEIVER

3.3V CMOS 18-BIT REGISTERED TRANSCEIVER Integrated Device Technology, Inc. IDT74FCT163501/A/C FEATURES: • 0.5 MICRON CMOS Technology • Typical tSK(o) (Output Skew) < 250ps • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Packages include 25 mil pi
Integrated Device Technology
Integrated Device Technology
transceiver
9IDT74FCT163501PV3.3V CMOS 18-BIT REGISTERED TRANSCEIVER

3.3V CMOS 18-BIT REGISTERED TRANSCEIVER Integrated Device Technology, Inc. IDT74FCT163501/A/C FEATURES: • 0.5 MICRON CMOS Technology • Typical tSK(o) (Output Skew) < 250ps • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) • Packages include 25 mil pi
Integrated Device Technology
Integrated Device Technology
transceiver


IDT Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1IDT02S60CSchottky Diode

IDT02S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • No reverse recovery/ no forward recovery • Temperature independent switching behavior • High surge current capability • Qualified according to JEDEC1) for target applica
Infineon Technologies
Infineon Technologies
diode
2IDT03S60CSchottky Diode

IDT03S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • No reverse recovery/ no forward recovery • Temperature independent switching behavior • High surge current capability • Qualified according to JEDEC1) for target applica
Infineon Technologies
Infineon Technologies
diode
3IDT04S60C2nd Generation thinQ SiC Schottky Diode

IDT04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current cap
Infineon Technologies AG
Infineon Technologies AG
diode
4IDT05S60C2nd Generation thinQ SiC Schottky Diode

IDT05S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • No temperature influence on the switching behavior • High surge current c
Infineon Technologies AG
Infineon Technologies AG
diode
5IDT06S60C2nd Generation thinQ SiC Schottky Diode

IDT06S60C 2nd generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current ca
Infineon Technologies AG
Infineon Technologies AG
diode
6IDT08S60C2nd Generation thinQ SiC Schottky Diode

IDT08S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current ca
Infineon Technologies AG
Infineon Technologies AG
diode
7IDT100494HIGH-SPEED BiCMOS ECL STATIC RAM 64K

IDT
IDT
cmos
8IDT101494HIGH-SPEED BiCMOS ECL STATIC RAM 64K

IDT
IDT
cmos
9IDT10494HIGH-SPEED BiCMOS ECL STATIC RAM 64K

IDT
IDT
cmos



Esta página es del resultado de búsqueda del IDT74FCT163501. Si pulsa el resultado de búsqueda de IDT74FCT163501 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.


nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


DataSheet.es    |   2020    |  Privacy Policy  |  Contacto  |  Sitemap