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SSP4N60B の電気的特性と機能

SSP4N60BのメーカーはFairchild Semiconductorです、この部品の機能は「600V N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 SSP4N60B
部品説明 600V N-Channel MOSFET
メーカ Fairchild Semiconductor
ロゴ Fairchild Semiconductor ロゴ 




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SSP4N60B Datasheet, SSP4N60B PDF,ピン配置, 機能
SSP4N60B/SSS4N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Features
• 4.0A, 600V, RDS(on) = 2.5@VGS = 10 V
• Low gate charge ( typical 22 nC)
• Low Crss ( typical 14 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• TO-220F package isolation = 4.0kV (Note 6)
D
G DS
TO-220
SSP Series
GD S
TO-220F
SSS Series
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature
SSP4N60B SSS4N60B
600
4.0 4.0 *
2.5 2.5 *
16 16 *
± 30
240
4.0
10
5.5
100 33
0.8 0.26
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient Max.
SSP4N60B
1.25
0.5
62.5
SSS4N60B
3.79
--
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. B, June 2002

1 Page





SSP4N60B pdf, ピン配列
Typical Characteristics
101 Top :
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom: 5.0 V
100
10-1
10-1
Notes :
1. 250μ s Pulse Test
2. TC = 25
100 101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
12
10
V = 10V
GS
8
6
V = 20V
GS
4
2
Note : T = 25
J
0
0 2 4 6 8 10 12
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
1500
1000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
C
iss
500
C
oss
Notes :
C
rss
1. VGS = 0 V
2. f = 1 MHz
0
10-1 100 101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2002 Fairchild Semiconductor Corporation
101
150oC
100
25oC
10-1
2
-55oC
Notes :
1.
2.
V25DS0μ=
40V
s Pulse
Test
468
VGS, Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150
25
Notes :
1.
2.
V25G0Sμ=
0V
s Pulse
Test
0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain voltage [V]
1.4
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
V = 120V
DS
V = 300V
DS
8 V = 480V
DS
6
4
2
Note : ID = 4.0 A
0
0 4 8 12 16 20 24
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. B, June 2002


3Pages


SSP4N60B 電子部品, 半導体
Gate Charge Test Circuit & Waveform
Same Type
50KΩ
as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
10V
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
10V
tp
Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS
=
--1--
2
L IAS2
BVDSS
--------------------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
DUT
VDD
VDS (t)
t p Time
©2002 Fairchild Semiconductor Corporation
Rev. B, June 2002

6 Page



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共有リンク

Link :


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Fairchild Semiconductor
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SSP4N60AS

Advanced Power MOFET

Samsung Electronics
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SSP4N60B

600V N-Channel MOSFET

Fairchild Semiconductor
Fairchild Semiconductor


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