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72616 の電気的特性と機能

72616のメーカーはVishay Siliconixです、この部品の機能は「P-Channel 20-V (D-S) MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 72616
部品説明 P-Channel 20-V (D-S) MOSFET
メーカ Vishay Siliconix
ロゴ Vishay Siliconix ロゴ 




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72616 Datasheet, 72616 PDF,ピン配置, 機能
New Product
P-Channel 20-V (D-S) MOSFET
Si7413DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.015 @ VGS = 4.5 V
20 0.020 @ VGS = 2.5 V
0.029 @ VGS = 1.8 V
ID (A)
13.2
11.4
9.5
FEATURES
D TrenchFETr Power MOSFET
D New PowerPAKr Package
Low Thermal Resistance, RthJC
Low 1.07-mm Profile
APPLICATIONS
D Load Switch
PowerPAK 1212-8
3.30 mm
D
8D
7D
6D
5
S
1S
3.30 mm
2S
3G
4
Bottom View
Ordering Information: Si7413DN-T1—E3
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
20
"8
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
ID
IDM
IS
PD
TJ, Tstg
13.2
8.4
9.5
6.1
30
3.2
1.3
3.8 1.5
2.0 0.8
55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72616
S-32519—Rev. A, 08-Dec-03
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJC
Typical
26
65
1.9
Maximum
33
81
2.4
Unit
_C/W
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1

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72616 pdf, ピン配列
New Product
Si7413DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.05
5000
Capacitance
0.04
0.03
0.02
VGS = 1.8 V
VGS = 2.5 V
4000
3000
2000
Ciss
0.01
VGS = 4.5 V
0.00
0
5 10 15 20
ID Drain Current (A)
Gate Charge
5
VDS = 10 V
4 ID = 13.2 A
25
30
1000
Crss
0
0
4
Coss
8 12 16
VDS Drain-to-Source Voltage (V)
20
On-Resistance vs. Junction Temperature
1.6
VGS = 4.5 V
1.4 ID = 13.2 A
3 1.2
2 1.0
1 0.8
0
0 5 10 15 20 25 30 35 40
Qg Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
30
TJ = 150_C
10
TJ = 25_C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD Source-to-Drain Voltage (V)
Document Number: 72616
S-32519—Rev. A, 08-Dec-03
0.6
50 25
0
25 50 75 100 125 150
TJ Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.06
0.05
0.04
0.03
ID = 3.5 A
ID = 13.2 A
0.02
0.01
0.00
0
1234
VGS Gate-to-Source Voltage (V)
5
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3


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部品番号部品説明メーカ
72616

P-Channel 20-V (D-S) MOSFET

Vishay Siliconix
Vishay Siliconix


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