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PDF DWA010 Data sheet ( 特性 )

部品番号 DWA010
部品説明 Ultrahigh-Speed Switching Diode
メーカ Sanyo Semicon Device
ロゴ Sanyo Semicon Device ロゴ 

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DWA010 Datasheet, DWA010 PDF,ピン配置, 機能
Ordering number : EN2171C
Silicon Epitaxial Planar Type
DWA010
Ultrahigh-Speed Switching Diode
Features
• Ideally suited for use in hybrid ICs because of ultrasmall package.
• High switching speed.
• Small interterminal capacitance.
Absolute Maximum Ratings at Ta=25°C
Peak Reverse Voltage
VRM
Reverse Voltage
VR
Peak Forward Current
IFM
IFM *
Average Rectified Current
Io
Io *
Surge Forward Current
IFSM
1µ s
IFSM *
Allowable Power Dissipation P
Junction Temperature
Tj
Storage Temperature
Tstg
* : Total value
85
80
300
450
100
150
4
6
200
125
–55 to +125
unit
V
V
mA
mA
mA
mA
A
A
mW
°C
°C
Electrical Characteristics at Ta=25°C
min typ max
Forward Voltage
VF1 IF=1mA
0.61
VF2 IF=10mA
0.74
VF3 IF=100mA
1.20
Reverse Current
IR1 VR=30V
0.1
IR2 VR=80V
0.5
Interterminal Capacitance
C
VR=0V, f=1MHz
Reverse Recovery Time
trr IF=10mA, VR=6V, RL=50, Irr=0.1Irp
2.0
4.0
Marking : W8
unit
V
V
V
µA
µA
pF
ns
Reverse Recovery Time Test Circuit
Package Dimensions 1164A
(unit : mm)
Electrical Connection
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
82597GI/41096GI/93094MO/2279TA, TS No.2171-1/2

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