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DTA144W の電気的特性と機能

DTA144WのメーカーはON Semiconductorです、この部品の機能は「Bias Resistor Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 DTA144W
部品説明 Bias Resistor Transistor
メーカ ON Semiconductor
ロゴ ON Semiconductor ロゴ 




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DTA144W Datasheet, DTA144W PDF,ピン配置, 機能
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MUN2111T1/D
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base
resistor and a base–emitter resistor. The BRT eliminates these individual components
by integrating them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SC–59 package which is designed
for low power surface mount applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC–59 package can be soldered using wave or reflow.
The modified gull–winged leads absorb thermal stress during
R1
soldering eliminating the possibility of damage to the die.
Available in 8 mm embossed tape and reel
PIN2 R2
BASE
Use the Device Number to order the 7 inch/3000 unit reel. (INPUT)
PIN3
COLLECTOR
(OUTPUT)
PIN1
EMITTER
(GROUND)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Collector–Base Voltage
Collector–Emitter Voltage
Collector Current
Total Power Dissipation @ TA = 25°C(1)
Derate above 25°C
VCBO
VCEO
IC
PD
MUN2111T1
SERIES
Motorola Preferred Devices
PNP SILICON
BIAS RESISTOR
TRANSISTOR
2
1
3
CASE 318D–03, STYLE 1
(SC–59)
Value
50
50
100
*200
1.6
Unit
Vdc
Vdc
mAdc
mW
mW/°C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Ambient (surface mounted)
Operating and Storage Temperature Range
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
RθJA
TJ, Tstg
TL
625
– 65 to +150
260
10
°C/W
°C
°C
Sec
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1(2)
MUN2116T1(2)
MUN2130T1(2)
MUN2131T1(2)
MUN2132T1(2)
MUN2133T1(2)
MUN2134T1(2)
6A
6B
6C
6D
6E
6F
6G
6H
6J
6K
6L
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
R2 (K)
10
22
47
47
1.0
2.2
4.7
47
47
REV 5
©MMoototorroollaa, ISncm. 1a9l9l–6Signal Transistors, FETs and Diodes Device Data
1

1 Page





DTA144W pdf, ピン配列
ELECTRICAL CHARACTERISTICS (Continued) (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k) MUN2130T1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) MUN2115T1
MUN2116T1
MUN2131T1
MUN2132T1
VOH
4.9
Input Resistor
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
R1 7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
Resistor Ratio
MUN2111T1/MUN2112T1/MUN2113T1
MUN2114T1
MUN2115T1/MUN2116T1
MUN2130T1/MUN2131T1/MUN2132T1
MUN2133T1
MUN2134T1
R1/R2
0.8
0.17
0.8
0.055
0.38
MUN2111T1 SERIES
Typ Max Unit
— — Vdc
10 13 k
22 28.6
47 61.1
10 13
10 13
4.7 6.1
1.0 1.3
2.2 2.9
4.7 6.1
4.7 6.1
22 28.6
1.0 1.2
0.21 0.25
——
1.0 1.2
0.1 0.185
0.47 0.56
250
200
150
100
50
0
– 50
RθJA = 625°C/W
0 50 100
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
150
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3


3Pages


DTA144W 電子部品, 半導体
MUN2111T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2113T1
1
IC/IB = 10
0.1
TA = –25°C 25°C
75°C
1000
100
TA = 75°C
25°C
–25°C
0.01
0
10 20 30
IC, COLLECTOR CURRENT (mA)
40
10
1
10
IC, COLLECTOR CURRENT (mA)
100
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
1
f = 1 MHz
100
TA = 75°C
25°C
0.8
lE = 0 V
TA = 25°C
10
–25°C
0.6 1
0.4 0.1
0.2 0.01
VO = 5 V
0 0.001
0 10 20 30 40 50
0 1 2 3 4 5 6 7 8 9 10
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 14. Output Capacitance
Figure 15. Output Current versus Input Voltage
100
VO = 0.2 V
TA = –25°C
25°C
10 75°C
1
0.1
0 10 20 30 40
IC, COLLECTOR CURRENT (mA)
50
Figure 16. Input Voltage versus Output Current
6 Motorola Small–Signal Transistors, FETs and Diodes Device Data

6 Page



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