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DT451NのメーカーはDiodes Incorporatedです、この部品の機能は「N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR」です。 |
部品番号 | DT451N |
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部品説明 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | ||
メーカ | Diodes Incorporated | ||
ロゴ | |||
このページの下部にプレビューとDT451Nダウンロード(pdfファイル)リンクがあります。 Total 4 pages
DT451N
N-CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
Features
· High Cell Density DMOS Technology
· Low On-State Resistance
· High Power and Current Capability
· Fast Switching Speed
· High Transient Tolerance
A
B
D
CD
GD S
EG
JH
KL
M
N
P
Mechanical Data
· SOT-223 Plastic Case
· Terminal Connections: See Outline Drawing
and Internal Circuit Diagram Above
SOT-223
Dim Min Max
A 6.30 6.71
B 2.90 3.10
C 6.71 7.29
D 3.30 3.71
E 2.22 2.35
G 0.92 1.00
H 1.10 1.30
R J 1.55 1.80
K 0.025 0.102
S L 0.66 0.79
M 4.55 4.70
N — 10°
P 10° 16°
R 0.254 0.356
S 10° 16°
All Dimensions in mm
Maximum Ratings 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Note 1a Continuous
Pulsed
Maximum Power Dissipation
Note 1a
Note 1b
Note 1c
Operating and Storage Temperature Range
Symbol
VDSS
VGSS
ID
Pd
Tj, TSTG
Value
30
±20
±5.5
±25
3.0
1.3
1.1
-65 to +150
Unit
V
V
A
W
°C
Thermal Characteristics
Characteristic
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Note 1
Symbol
RQJA
RQJC
Value
42
12
Unit
°C/W
°C/W
Notes:
1. RQJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as
the solder mounting surface of the drain pins. RQJC is guaranteed by design while RQCA is determined by the user’s board design.
1a. With 1 in2 oz 2 oz. copper mounting pad RQJA = 42°C/W.
1b. With 0.0066 in2 oz 2 oz. copper mounting pad RQJA = 95°C/W.
1c. With 0.0123 in2 oz 2 oz. copper mounting pad RQJA = 110°C/W.
DS11607 Rev. C-4
1 of 4
DT451N
1 Page 18
VGS = 10V 6.0
5.0
4.5
4.0
12
3.5
6
3.0
3.0
VGS = 3.5V
4.0V
2.5
2.0
4.5V
1.5 5.0V
6.0V
1.0 10V
0
0 12
VDFSig,.D1R, AOINn--RSOegUioRnCCEhVaOraLcTteArGisEtic(sV)
0.5
3 0 3 6 9 12 15 18
Fig. 2, On-ResisIDta, nDcReAvIsNGCaUteRVRoEltNaTge(Aa)nd Drain Current
1.6
ID = 5.5A
VGS = 10V
1.4
1.2
1.0
10
VDS = 10V
8
6
4
TJ = -55 C 125
25
0.8 2
0.6
-50 -25 0
25 50 75 100 125 150
FTigj,.
JUNCTION TEMPERATURE ( C)
3, On-Resistance vs Temperature
0
1 1.5 2 2.5 3 3.5 4
VGS,FGigA. T4E,
TO SOURCE VOLTAGE
Transfer Characteristics
(V)
DS11607 Rev. C-4
3 of 4
DT451N
3Pages | |||
ページ | 合計 : 4 ページ | ||
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PDF ダウンロード | [ DT451N データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
DT451AN | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |
DT451N | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes Incorporated |