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DT3055L の電気的特性と機能

DT3055LのメーカーはDiodes Incorporatedです、この部品の機能は「N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 DT3055L
部品説明 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
メーカ Diodes Incorporated
ロゴ Diodes Incorporated ロゴ 




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DT3055L Datasheet, DT3055L PDF,ピン配置, 機能
DT3055L
N-CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
Features
· High Cell Density DMOS Technology
· Low On-State Resistance
· High Power and Current Capability
· Fast Switching Speed
· High Transient Tolerance
A
B
D
CD
GD S
EG
JH
KL
M
N
P
Mechanical Data
· SOT-223 Plastic Case
· Terminal Connections: See Outline Drawing
and Internal Circuit Diagram Above
SOT-223
Dim Min Max
A 6.30 6.71
B 2.90 3.10
C 6.71 7.29
D 3.30 3.71
E 2.22 2.35
G 0.92 1.00
H 1.10 1.30
R J 1.55 1.80
K 0.025 0.102
S L 0.66 0.79
M 4.55 4.70
N — 10°
P 10° 16°
R 0.254 0.356
S 10° 16°
All Dimensions in mm
Maximum Ratings 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage - Continuous
Drain Current
Note 1a Continuous
Pulsed
Maximum Power Dissipation
Note 1a
Note 1b
Note 1c
Operating and Storage Temperature Range
Thermal Characteristics
Characteristic
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Note 1
Symbol
VDSS
VGSS
ID
Pd
Tj, TSTG
Symbol
RQJA
RQJC
Value
60
±20
±3.5
±25
3.0
1.3
1.1
-65 to +150
Value
42
12
Unit
V
V
A
W
°C
Unit
°C/W
°C/W
Notes:
1. RQJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as
the solder mounting surface of the drain pins. RQJC is guaranteed by design while RQCA is determined by the user’s board design.
1a. With 1 in2 oz 2 oz. copper mounting pad RQJA = 42°C/W.
1b. With 0.0066 in2 oz 2 oz. copper mounting pad RQJA = 95°C/W.
1c. With 0.0123 in2 oz 2 oz. copper mounting pad RQJA = 110°C/W.
DS11605 Rev. C-4
1 of 4
DT3055L

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DT3055L pdf, ピン配列
20
15
10
5
0
0
VGS = 10V
6.0V
5.5V
5.0V
4.5V
4.0V
3.0V
2.5V
12
34
VDFSig,.D1R, AOINn--RSOegUioRnCCEhVaOraLcTteArGisEtic(sV)
5
2.5
VGS = 3.0V
2.0
3.5V
4.0V
1.5
4.5V
1.0 5.0V
6.0V
10V
0.5
0 3 6 9 12 15
Fig. 2, On-ResisIDta, nDcReAvIsNGCaUteRVRoEltNaTge(Aa)nd Drain Current
1.8
ID = 3.5A
VGS = 5V
1.6
10
VDS = 15V
8
TJ = -55 C
125 C
25 C
1.4
1.2
1.0
0.8
0.6
-50 -25 0 25 50 75 100 125 150
FTigj,.J3U, NOCnT-IROeNsiTstEaMncPeEvRsATeTmURpeEra( tuCr)e
6
4
2
0
1 1.5 2 2.5 3 3.5 4
Fig. 4, VDGrSa,inGCATuErreTnOt vSsOGUaRteCVEoVltaOgLeTA&GTEem(Vp)erature
DS11605 Rev. C-4
3 of 4
DT3055L


3Pages





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共有リンク

Link :


部品番号部品説明メーカ
DT3055

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Diodes Incorporated
Diodes Incorporated
DT3055L

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Diodes Incorporated
Diodes Incorporated


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