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PDF 2SD2469 Data sheet ( Hoja de datos )
| Número de pieza | 2SD2469 | |
| Descripción | Silicon PNP epitaxial planar type(For power switching) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Power Transistors
2SD2469, 2SD2469A
Silicon NPN epitaxial planar type
For power switching
Complementary to 2SB1607
s Features
q Low collector to emitter saturation voltage VCE(sat)
q Satisfactory linearity of foward current transfer ratio hFE
q Large collector current IC
q Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SD2469
base voltage 2SD2469A
VCBO
130
150
Collector to 2SD2469
emitter voltage 2SD2469A
VCEO
80
100
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
PC
7
15
7
40
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
9.9±0.3
φ3.2±0.1
Unit: mm
4.6±0.2
2.9±0.2
1.2±0.15
1.45±0.15
2.6±0.1
0.7±0.1
0.75±0.1
2.54±0.2
5.08±0.4
7° 1 2 3
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter 2SD2469
voltage
2SD2469A
ICBO
IEBO
VCEO
VCB = 100V, IE = 0
VEB = 5V, IC = 0
IC = 10mA, IB = 0
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
hFE1
hFE2*
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCE = 2V, IC = 0.1A
VCE = 2V, IC = 3A
IC = 5A, IB = 0.25A
IC = 5A, IB = 0.25A
VCE = 10V, IC = 0.5A, f = 10MHz
IC = 3A, IB1 = 0.3A, IB2 = – 0.3A,
VCC = 50V
min typ max Unit
10 µA
50 µA
80
V
100
45
90 260
0.5 V
1.5 V
30 MHz
0.5 µs
1.5 µs
0.1 µs
*hFE2 Rank classification
Rank
Q
P
hFE2 90 to 180 130 to 260
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SD2469.PDF ] | |
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