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PDF 2SD2358 Data sheet ( Hoja de datos )

Número de pieza 2SD2358
Descripción Silicon NPN epitaxial planer type(For low-frequency output amplification)
Fabricantes Panasonic Semiconductor 
Logotipo Panasonic Semiconductor Logotipo



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No Preview Available ! 2SD2358 Hoja de datos, Descripción, Manual

Transistors
2SD2358
Silicon NPN epitaxial planer type
For low-frequency output amplification
Complementary to 2SB1538
I Features
Low collector to emitter saturation voltage VCE(sat): < 0.15 V
Allowing supply with the radial taping
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation *
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
10
10
5
1.2
1
1
150
55 to +150
V
V
V
A
A
W
°C
°C
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the
board thickness of 1.7 mm for the collector portion
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
0.65 max.
+0.1
0.450.05
2.5±0.5 2.5±0.5
123
Note) In addition to the
lead type shown in
the upper figure,
the type as shown
in the lower figure
is also available.
1: Emitter
2: Collector
3: Base
MT2 Type Package
1.2±0.1
0.45+−00..105
0.65
max.
(HW Type)
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
VCBO
VCEO
VEBO
hFE
VCE(sat)
fT
Cob
VCB = 7 V, IE = 0
IC = 10 µA, IE = 0
IC = 1 mA, IB = 0
IE = 10 µA, IC = 0
VCE = 2 V, IC = 100 mA
IC = 500 mA, IB = 20 mA
VCB = 5 V, IE = −50 mA, f = 200 MHz
VCB = 20 V, IE = 0, f = 1 MHz
10
10
5
200
1
800
0.15
120
30
µA
V
V
V
V
MHz
pF
1

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