|
|
2SD2131のメーカーはToshiba Semiconductorです、この部品の機能は「Silicon NPN Triple Diffused Type TRANSISTOR」です。 |
部品番号 | 2SD2131 |
| |
部品説明 | Silicon NPN Triple Diffused Type TRANSISTOR | ||
メーカ | Toshiba Semiconductor | ||
ロゴ | |||
このページの下部にプレビューと2SD2131ダウンロード(pdfファイル)リンクがあります。 Total 5 pages
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
2SD2131
2SD2131
High-Power Switching Applications
Hammer Drive, Pulse Motor Drive Applications
Unit: mm
• High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A)
• Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)
• Zener diode included between collector and base.
• Unclamped inductive load energy: E = 150 mJ (min)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
60 ± 10
60 ± 10
7
5
8
0.5
2.0
30
150
−55 to 150
V
V
V
A
A
W
°C
°C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Collector
Base
≈ 5 kΩ
≈ 150 Ω
Emitter
1 2006-11-21
1 Page IC – VCE
53
Common
8 2 emitter
Tc = 25°C
1.5
61
0.7
4 0.5
2 IB = 0.3 mA
0
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
30000
10000
5000
3000
1000
500
hFE – IC
Common emitter
VCE = 3 V
Tc = 100°C
25
−55
200
0.05 0.1
0.3 0.5 1
3 5 10 20
Collector current IC (A)
2SD2131
IC – VBE
8
6
4
2 Tc = 100°C
−55
Common emitter
25 VCE = 3 V
0
0 0.8 1.6 2.4 3.2 4.0
Base-emitter voltage VBE (V)
VCE – IB
2.4
2.0 IC = 8 A
1.6 5
1.2
1
0.8 0.1
3
0.4
0
0.1
0.3 0.5 1
3 5 10
Common emitter
Tc = 25°C
30 50 100 300
Base current IB (mA)
VCE (sat) – IC
10
Common emitter
5 IC/IB = 250
3
1
25
0.5
Tc = −55°C
100
0.3
0.1
0.3 0.5
1
3
Collector current IC (A)
5
10
VBE (sat) – IC
10
Common emitter
5 IC/IB = 250
3
Tc = −55°C
25
1
100
0.5
0.3
0.1
0.3 0.5
1
3
Collector current IC (A)
5
10
3 2006-11-21
3Pages | |||
ページ | 合計 : 5 ページ | ||
|
PDF ダウンロード | [ 2SD2131 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
2SD2130 | Silicon NPN Epitaxial Type TRANSISTOR | Toshiba Semiconductor |
2SD2131 | Silicon NPN Triple Diffused Type TRANSISTOR | Toshiba Semiconductor |
2SD2132 | NPN SIlicon Transistor | ROHM Semiconductor |
2SD2133 | Silicon NPN epitaxial planar type | Panasonic Semiconductor |