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Número de pieza | 2SD1633 | |
Descripción | Silicon NPN triple diffusion planar type darlington | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SD1633 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! Power Transistors
2SD1633
Silicon NPN triple diffusion planar type darlington
For voltage switching
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
■ Features
• High-speed switching
• Satisfactory linearity of forward current transfer ratio hFE
• Full-pack package which can be installed to the heat sink with one screw
φ 3.1±0.1
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
1.4±0.1
0.8±0.1
1.3±0.2
0.5+–00..12
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Base current
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
100
100
7
5
8
0.5
30
2.0
150
−55 to +150
V
V
V
A
A
A
W
°C
°C
2.54±0.3
5.08±0.5
1: Base
123
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Internal Connection
C
B
■ Electrical Characteristics TC = 25°C ± 3°C
E
Parameter
Symbol
Collector-emitter sustaining voltage *2 VCEO(SUS)
Collector-base cutoff current (Emitter open) ICBO
Collector-emitter cut-off current (Base open) ICEO
Emitter-base cutoff current (Collector open)
Forward current transfer ratio *1
IEBO
hFE
Collector-emitter saturation voltage
VCE(sat)
Base-emitter saturation voltage
VBE(sat)
Transition frequency
fT
Turn-on time
ton
Storage time
tstg
Fall time
tf
Conditions
IC = 0.2 A, L = 25 mH
VCB = 100 V, IE = 0
VCE = 100 V, IB = 0
VEB = 7 V, IC = 0
VCE = 3 V, IC = 3 A
IC = 3 A, IB = 3 mA
IC = 3 A, IB = 3 mA
VCE = 10 V, IC = 1 A, f = 1 MHz
IC = 3 A, IB1 = 3 mA, IB2 = −3 mA
VCC = 50 V
Min
100
1 500
Typ Max
100
100
5
15 000
1.5
2.0
15
3
5
3
Unit
V
µA
µA
mA
V
V
MHz
µs
µs
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Rank classification
*2: VCEO(SUS) test circuit
Rank
hFE
QP
1 500 to 6 000 5 000 to 15 000
50 Hz/60 Hz
mercury relay
X
L
120 Ω
6V
Y
1Ω
15 V
G
Publication date: March 2003
SJD00207AED
1
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet 2SD1633.PDF ] |
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