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2SD1153 の電気的特性と機能

2SD1153のメーカーはSanyo Semicon Deviceです、この部品の機能は「PNP/NPN Epitaxial Planar Silicon Darlington Tranasistors」です。


製品の詳細 ( Datasheet PDF )

部品番号 2SD1153
部品説明 PNP/NPN Epitaxial Planar Silicon Darlington Tranasistors
メーカ Sanyo Semicon Device
ロゴ Sanyo Semicon Device ロゴ 




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2SD1153 Datasheet, 2SD1153 PDF,ピン配置, 機能
Ordering number:ENN828D
PNP/NPN Epitaxial Planar Silicon Darlington Tranasistors
2SB865/2SD1153
Drivers Applications
Applications
· Relay drivers, hammer drivers, lamp drivers, motor
drivers.
Features
· High DC current gain (4000 or more).
· Large current capacity and wide ASO.
· Low saturation voltage.
Package Dimensions
unit:mm
2006B
[2SB865/2SD1153]
6.0
5.0 4.7
0.5
0.6
0.5 0.5
( ) : 2SB865
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
ICBO
IEBO
hFE1
hFE2
fT
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCB=()40V, IE=0
VEB=()8V, IC=0
VCE=()2V, IC=()500mA
VCE=()2V, IC=()10mA
VCE=()10V, IC=()50mA
IC=()500mA, IB=()0.5mA
IC=()500mA, IB=()0.5mA
IC=()10µA, IE=0
IC=()1mA, RBE=
IE=()10µA, IC=0
123
1.45 1.45
1 : Emitter
2 : Collector
3 : Base
SANYO : MP
Ratings
(–)80
(–)50
(–)10
(–)1.5
(–)3
900
150
–55 to +150
Unit
V
V
V
A
A
mW
˚C
˚C
Ratings
min typ
4000
3000
()80
()50
()10
120
()0.9
()1.5
max
()0.1
()0.1
()1.5
()2.0
Unit
µA
µA
MHz
V
V
V
V
V
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O0303TN (KT)/91098HA (KT)/4027KI/3045MW/D152KI, TS No.828–1/3

1 Page





2SD1153 pdf, ピン配列
2SB865/2SD1153
VBE(sat) -- IC
3
2SB865
2 IC / IB=1000
VBE(sat) -- IC
3
2SD1153
2 IC / IB=1000
--10 10
77
55
33
22
--1.0
7
5
5 7 --0.01
1000
2 3 5 7 --0.1 2 3 5
Collector Current, IC – A
PC -- Ta
7 --1.0 2
ITR08514
2SB865 / 2SD1153
800
600
400
200
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta – ˚C
ITR08516
1.0
7
5
5 7 0.01
5
ICP=3A
3
2 IC=1.5A
2 3 5 7 0.1 2 3 5 7 1.0 2
Collector Current, IC – A
ITR08515
ASO
1.0
7
5
3 DC
2
0.1
operation
7
5
3 2SB865 / 2SD1153
2 DC single pulse
(For PNP, minus sign is omitted.)
0.01
3 5 7 1.0
2 3 5 7 10
2 3 5 7 100
Collector-to-Emitter Voltage, VCE – V ITR08517
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of October, 2003. Specifications and information herein are subject
to change without notice.
PS No.828–3/3


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共有リンク

Link :


部品番号部品説明メーカ
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2SD1153

PNP/NPN Epitaxial Planar Silicon Darlington Tranasistors

Sanyo Semicon Device
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2SD1154

Si NPN Epitaxial

ETC
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2SD1154

Silicon NPN Power Transistor

Inchange Semiconductor
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