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2SC5171のメーカーはToshiba Semiconductorです、この部品の機能は「NPN EPITAXIAL TYPE (POWER/ DRIVER STAGE AMPLIFIER APPLICATIONS)」です。 |
部品番号 | 2SC5171 |
| |
部品説明 | NPN EPITAXIAL TYPE (POWER/ DRIVER STAGE AMPLIFIER APPLICATIONS) | ||
メーカ | Toshiba Semiconductor | ||
ロゴ | |||
このページの下部にプレビューと2SC5171ダウンロード(pdfファイル)リンクがあります。 Total 4 pages
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5171
Power Amplifier Applications
Driver Stage Amplifier Applications
2SC5171
Unit: mm
• High transition frequency: fT = 200 MHz (typ.)
• Complementary to 2SA1930
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
VCBO
VCEO
VEBO
IC
IB
PC
180 V
180 V
5V
2A
1A
2.0
W
20
JEDEC
―
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEITA
TOSHIBA
―
2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 1.7 g (typ.)
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-10
Free Datasheet http://www.Datasheet4U.com
1 Page 2.0
150
100
1.6
IC – VCE
50
40
30
20
1.2 10
8
6
0.8
4
IB = 2 mA
0.4
Common emitter
Tc = 25°C
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
2SC5171
IC – VBE
2.0
1.6
1.2
Tc = 100°C
25°C
0.8
−25°C
0.4
Common emitter
VCE = 5 V
0
0 0.4 0.8 1.2 1.6 2.0
Base-emitter voltage VBE (V)
VCE (sat) – IC
1
0.1
0.01
0.01
Tc = 100°C
Tc = 25°C
Tc = −25°C
Common emitter
IC/IB = 10
0.1 1
10
Collector current IC (A)
Safe Operating Area
5 IC max (pulsed)*
3 10 ms*
IC max
(continuous)
1
DC operation
0.5 Tc = 25°C
0.3
100 μs*
1 ms*
100 ms*
0.1
0.05
0.03
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
0.01 temperature.
VCEO max
3 10 30 100 300 1000
Collector-emitter voltage VCE (V)
1000
hFE – IC
300 Tc = 100°C
100
Tc = 25°C
30
Tc = −25°C
10
3
0.01
Common emitter
VCE = 5 V
0.1 1 10
Collector current IC (A)
3 2006-11-10
Free Datasheet http://www.Datasheet4U.com
3Pages | |||
ページ | 合計 : 4 ページ | ||
|
PDF ダウンロード | [ 2SC5171 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
2SC517 | NPN Transistor | ETC |
2SC5171 | NPN EPITAXIAL TYPE (POWER/ DRIVER STAGE AMPLIFIER APPLICATIONS) | Toshiba Semiconductor |
2SC5171 | Silicon NPN Power Transistor | INCHANGE |
2SC5172 | NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING/ HIGH SPEED DC-DC CONVERTER APPLICATIONS) | Toshiba Semiconductor |