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PDF 2SC5037A Data sheet ( 特性 )

部品番号 2SC5037A
部品説明 Silicon NPN triple diffusion planar type
メーカ Panasonic Semiconductor
ロゴ Panasonic Semiconductor ロゴ 

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2SC5037A Datasheet, 2SC5037A PDF,ピン配置, 機能
Power Transistors
2SC5037, 2SC5037A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s Features
q High-speed switching
q High collector to base voltage VCBO
q Wide area of safe operation (ASO)
q Satisfactory linearity of foward current transfer ratio hFE
q Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SC5037A
base voltage 2SC5037A
VCBO
900
1000
Collector to 2SC5037A
emitter voltage 2SC5037A
VCES
900
1000
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCEO
VEBO
ICP
IC
IB
PC
800
7
5
3
1
40
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
9.9±0.3
φ3.2±0.1
Unit: mm
4.6±0.2
2.9±0.2
1.2±0.15
1.45±0.15
2.6±0.1
0.7±0.1
0.75±0.1
2.54±0.2
5.08±0.4
7° 1 2 3
1:Base
2:Collector
3:Emitter
TO–220E Full Pack Package
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff
2SC5037A
current
2SC5037A
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
IEBO
VCEO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = 900V, IE = 0
VCB = 1000V, IE = 0
50
µA
50
VEB = 7V, IC = 0
50 µA
IC = 10mA, IB = 0
800
µA
VCE = 5V, IC = 0.1A
8
V
VCE = 5V, IC = 0.8A
6
IC = 0.8A, IB = 0.16A
1.5 V
IC = 0.8A, IB = 0.16A
1.5 V
VCE = 5V, IC = 0.15A, f = 1MHz
10 MHz
IC = 0.8A, IB1 = 0.16A, IB2 = – 0.32A,
VCC = 250V
0.7 µs
2.5 µs
0.3 µs
1

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