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2SC5013-T2のメーカーはNECです、この部品の機能は「HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD」です。 |
部品番号 | 2SC5013-T2 |
| |
部品説明 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD | ||
メーカ | NEC | ||
ロゴ | |||
このページの下部にプレビューと2SC5013-T2ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
DATA SHEET
SILICON TRANSISTOR
2SC5013
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS SUPER MINI MOLD
FEATURES
• Small Package
• High Gain Bandwidth Product (fT = 10 GHz TYP.)
• Low Noise, High Gain
• Low Voltage Operation
ORDERING INFORMATION
PART
NUMBER
2SC5013-T1
2SC5013-T2
QUANTITY
3 Kpcs/Reel.
3 Kpcs/Reel.
PACKING STYLE
Embossed tape 8 mm wide.
Pin3 (Base), Pin4 (Emitter) face to
perforation side of the tape.
Embossed tape 8 mm wide.
Pin1 (Collector), Pin2 (Emitter) face
to perforation side of the tape.
* Please contact with responsible NEC person, If you require
evaluation sample. Unit sample quantity shall be 50 pcs.
(Part No.: 2SC5013)
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage
VCBO
20
Collector to Emitter Voltage
VCEO
10
Emitter to Base Voltage
VEBO
1.5
Collector Current
IC 35
Total Power Dissipation
PT 150
Junction Temperature
Tj 150
Storage Temperature
Tstg –65 to +150
V
V
V
mA
mW
˚C
˚C
PACKAGE DIMENSIONS
in millimeters
2.1 ± 0.2
1.25 ± 0.1
0.3
+0.1
–0.05
(LEADS 2, 3, 4)
23
0.4
+0.1
–0.05
1
4
0 to 0.1
0.15
+0.1
–0.05
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
Caution; Electrostatic Sensitive Device.
Document No. P10401EJ2V0DS00 (2nd edition)
(Previous No. TD-2413)
Date Published July 1995 P
Printed in Japan
© 1993
1 Page TYPICAL CHARACTERISTICS (TA = 25 ˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
200
100
0 50 100 150
TA - Ambient Temperature - ˚C
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
30
IB =
200 µA
20
180 µA
160 µA
140 µA
120 µA
100 µA
10 80 µA
60 µA
40 µA
20 µA
0 2 4 6 8 10 12
VCE - Collector to Emitter Voltage - V
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
12
VCE = 6 V
f = 1 GHz
10
8
6
4
2
0
12
5 10 20
IC - Collector Current - mA
50
2SC5013
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
VCE = 6 V
40
30
20
10
0 0.5 1.0
VBE - Base to Emitter Voltage - V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
500
VCE = 6 V
200
100
50
20
10
1
2
5 10 20
IC - Collector Current - mA
50
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
12
VCE = 6 V
f = 2 GHz
8
4
0
12
5 10 20
IC - Collector Current - mA
50
3
3Pages 2SC5013
S-PARAMETER
VCE = 3 V, IC = 3 mA
FREQUENCY
S11
f (MHz)
MAG
ANG
100.00
200.00
300.00
400.00
500.00
600.00
700.00
800.00
900.00
1000.00
1100.00
1200.00
1300.00
1400.00
1500.00
1600.00
1700.00
1800.00
1900.00
2000.00
2100.00
2200.00
2300.00
2400.00
2500.00
2600.00
2700.00
2800.00
2900.00
3000.00
.902
.851
.802
.740
.673
.628
.570
.525
.476
.444
.414
.382
.362
.347
.331
.323
.325
.311
.299
.316
.303
.311
.308
.298
.319
.323
.320
.318
.339
.322
–13.0
–26.2
–37.4
–48.4
–58.7
–68.1
–77.1
–85.5
–94.0
–101.0
–108.1
–115.4
–123.1
–129.7
–136.8
–144.1
–151.0
–156.6
–161.8
–169.4
–176.8
179.4
173.8
169.7
164.0
161.0
158.3
155.2
152.9
146.3
VCE = 3 V, IC = 1 mA
FREQUENCY
S11
f (MHz)
MAG
ANG
100.00
200.00
300.00
400.00
500.00
600.00
700.00
800.00
900.00
1000.00
1100.00
1200.00
1300.00
1400.00
1500.00
1600.00
1700.00
1800.00
1900.00
2000.00
2100.00
2200.00
2300.00
2400.00
2500.00
2600.00
2700.00
2800.00
2900.00
3000.00
.971
.950
.937
.910
.877
.858
.822
.792
.751
.718
.686
.649
.623
.592
.565
.542
.524
.508
.483
.481
.453
.445
.445
.425
.436
.419
.430
.416
.433
.408
–7.4
–15.4
–22.4
–29.7
–36.9
–44.0
–51.3
–58.1
–65.0
–71.4
–78.2
–84.4
–91.2
–97.1
–104.0
–110.2
–117.6
–122.9
–127.9
–135.3
–141.6
–147.4
–152.3
–157.1
–163.5
–169.2
–172.0
–176.9
178.9
173.9
6
S21
MAG
ANG
9.558
9.143
8.623
7.924
7.396
6.856
6.376
5.838
5.406
5.065
4.698
4.347
4.108
3.874
3.663
3.457
3.312
3.143
3.009
2.883
2.746
2.636
2.539
2.446
2.371
2.291
2.203
2.146
2.066
1.987
168.7
157.3
147.3
138.3
129.6
122.9
116.2
110.2
105.2
100.2
96.0
91.6
88.0
84.3
80.7
77.5
74.7
71.5
68.8
65.2
62.4
59.0
57.0
54.5
51.4
49.2
47.5
44.2
42.5
39.1
S21
MAG
ANG
3.546
3.498
3.464
3.348
3.321
3.232
3.187
3.054
2.949
2.867
2.750
2.620
2.543
2.449
2.362
2.259
2.219
2.117
2.043
1.989
1.901
1.850
1.791
1.722
1.691
1.642
1.577
1.552
1.488
1.450
173.5
166.3
159.7
153.4
146.0
140.7
134.4
128.3
122.9
117.5
112.7
107.1
102.7
98.2
93.5
89.2
85.9
81.6
78.3
74.0
70.1
65.9
63.4
60.3
56.6
53.7
51.8
47.7
45.5
42.1
S12
MAG
ANG
.014
.028
.039
.047
.059
.064
.069
.075
.079
.086
.088
.095
.097
.098
.100
.103
.107
.113
.114
.118
.123
.125
.128
.137
.141
.139
.143
.149
.150
.162
84.4
74.3
69.7
62.4
58.6
56.0
53.7
52.2
51.0
48.3
48.0
47.4
47.5
45.7
45.9
44.4
46.4
44.2
46.4
44.7
45.6
43.0
44.0
45.1
42.7
43.4
42.6
42.2
42.5
41.3
S12
MAG
ANG
.019
.031
.045
.058
.071
.082
.090
.102
.110
.116
.122
.131
.128
.137
.136
.140
.147
.148
.140
.147
.145
.145
.154
.145
.148
.148
.143
.146
.145
.155
84.5
75.8
76.2
67.5
67.2
62.3
58.1
56.1
50.7
48.6
45.0
42.7
42.4
37.2
33.7
32.8
29.5
28.3
30.1
28.4
25.9
25.6
24.4
25.6
25.9
22.1
22.3
22.6
23.0
22.8
S22
MAG
ANG
.979
.954
.919
.870
.820
.777
.741
.698
.671
.650
.621
.606
.584
.570
.543
.540
.525
.523
.515
.504
.492
.488
.486
.470
.468
.463
.462
.469
.457
.458
–6.1
–11.7
–16.7
–20.8
–24.6
–27.4
–29.3
–32.1
–33.0
–34.5
–35.7
–37.3
–38.4
–39.5
–40.5
–41.8
–42.7
–44.8
–46.4
–47.9
–50.0
–51.8
–52.1
–53.4
–55.8
–56.2
–58.9
–62.4
–63.6
–66.6
S22
MAG
ANG
.998
.986
.983
.962
.946
.928
.909
.884
.852
.845
.813
.793
.767
.758
.729
.715
.703
.692
.674
.667
.652
.642
.636
.630
.619
.609
.610
.606
.596
.597
–3.3
–6.9
–9.9
–13.2
–16.6
–19.3
–21.9
–25.5
–27.2
–29.7
–32.3
–34.2
–36.0
–38.7
–40.0
–41.5
–43.2
–45.5
–47.2
–49.0
–51.0
–52.6
–54.4
–56.3
–58.8
–58.5
–61.9
–64.8
–64.8
–67.4
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ 2SC5013-T2 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
2SC5013-T1 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD | NEC |
2SC5013-T2 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD | NEC |