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2SC5000のメーカーはToshiba Semiconductorです、この部品の機能は「NPN EPITAXIAL TYPE (POWER AMPLIFIER APPLICATIONS)」です。 |
部品番号 | 2SC5000 |
| |
部品説明 | NPN EPITAXIAL TYPE (POWER AMPLIFIER APPLICATIONS) | ||
メーカ | Toshiba Semiconductor | ||
ロゴ | |||
このページの下部にプレビューと2SC5000ダウンロード(pdfファイル)リンクがあります。 Total 4 pages
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5000
Power Amplifier Applications
2SC5000
Unit: mm
• Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 5 A)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 80 V
Collector-emitter voltage
VCEO 50 V
Emitter-base voltage
VEBO 7 V
Collector current
IC 10 A
Base current
IB 1 A
Collector power dissipation
PC 25 W
Junction temperature
Tj 150 °C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
―
temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-10R1A
operating temperature/current/voltage, etc.) are within the
Weight: 1.7 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-10
1 Page 2SC5000
IC – VCE
10
80 70 60
8 50
40
6
30
4 20
2 IB = 10 mA
Common emitter
Tc = 25°C
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
1000
500
300
100
50
30
hFE – IC
Tc = 100°C
25 −25
10
5
3 Common emitter
VCE = 1 V
1
0.01
0.1
1
Collector current IC (A)
10
30
VBE (sat) – IC
10
5 Common emitter
3 IC/IB = 20
1
0.5
0.3
−25 25 Tc = 100°C
0.1
0.05
0.03
0.01
0.01
0.1 1
Collector current IC (A)
10
30
IC – VBE
20
Common emitter
VCE = 1 V
16
12
8 100
Tc = −25°C
4
25
0
0 0.4 0.8 1.2 1.6 2.0
Base-emitter voltage VBE (V)
VCE (sat) – IC
10
5 Common emitter
3 IC/IB = 20
1
0.5
0.3
0.1
0.05
0.03
Tc = 100°C
25
−25
0.01
0.01
0.1 1
Collector current IC (A)
10
30
Safe Operating Area
30
IC max (pulsed)*
IC max
(continuous)
10
10 ms*
5
DC operation
3 Tc = 25°C
1 ms*
100 μs*
100 ms*
1
0.5
0.3 *: Single nonrepetitive
pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
0.1
1
35
10
VCEO max
30 50
Collector-emitter voltage VCE (V)
100
3 2006-11-10
3Pages | |||
ページ | 合計 : 4 ページ | ||
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PDF ダウンロード | [ 2SC5000 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
2SC5000 | NPN EPITAXIAL TYPE (POWER AMPLIFIER APPLICATIONS) | Toshiba Semiconductor |
2SC5001 | Low Vce(sat) Transistor (Strobe flash) (-20V/ -10A) | ROHM Semiconductor |
2SC5002 | Silicon NPN Triple Diffused Planar Transistor(Display Horizontal Deflection Output/ Switching Regulator and General Purpose) | Sanken electric |
2SC5002 | SILICON POWER TRANSISTOR | SavantIC |