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PDF 2SC4960 Data sheet ( Hoja de datos )
| Número de pieza | 2SC4960 | |
| Descripción | Silicon NPN triple diffusion planar type(For power switching) | |
| Fabricantes | Panasonic Semiconductor | |
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Power Transistors
2SC4960, 2SC4960A
Silicon NPN triple diffusion planar type
For power switching
s Features
q High-speed switching
q High collector to base voltage VCBO
q Satisfactory linearity of foward current transfer ratio hFE
q Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SC4960
base voltage 2SC4960A
VCBO
900
900
Collector to emitter voltage
Collector to 2SC4960
emitter voltage 2SC4960A
VCES
VCEO
900
800
900
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
IB
PC
7
2
1
0.3
40
3
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
Unit: mm
15.0±0.3
11.0±0.2
φ3.2±0.1
5.0±0.2
3.2
2.0±0.2
1.1±0.1
5.45±0.3
10.9±0.5
123
2.0±0.1
0.6±0.2
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
ICBO VCB = 900V, IE = 0
50 µA
Emitter cutoff current
IEBO VEB = 7V, IC = 0
50 µA
Collector to emitter 2SC4960
voltage
VCEO
2SC4960A
IC = 1mA, IB = 0
IC = 1mA, IB = 0
800
900
V
Forward current transfer ratio
hFE1
hFE2
VCE = 5V, IC = 0.05A
VCE = 5V, IC = 0.5A
6
3
Collector to emitter saturation voltage VCE(sat)
IC = 0.2A, IB = 0.04A
1.5 V
Base to emitter saturation voltage VBE(sat)
IC = 0.2A, IB = 0.04A
1V
Transition frequency
fT VCE = 10V, IC = 0.05A, f = 1MHz
4 MHz
Turn-on time
Storage time
Fall time
ton
IC = 0.2A, IB1 = 0.04A, IB2 = – 0.08A,
tstg
VCC = 250V
tf
1 µs
3 µs
1 µs
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC4960.PDF ] | |
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